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相关论文: Ions leaving no tracks

200 篇论文

The recent discovery of superconductivity in BaFe$_2$S$_3$ [Takahashi {\it et al.}, Nat. Mater. {\bf 14}, 1008 (2015)] has stimulated considerable interest in 123-type iron chalcogenides. This material is the first reported iron-based…

材料科学 · 物理学 2017-05-02 Yang Zhang , Lingfang Lin , Jun-Jie Zhang , Elbio Dagotto , Shuai Dong

The discovery of superconductivity in the two-leg ladder compound BaFe$_2$S$_3$ has established the 123-type iron chalcogenides as a novel and interesting subgroup of the iron-based superconductors family. However, in this 123 series,…

材料科学 · 物理学 2018-01-18 Yang Zhang , Ling-Fang Lin , Jun-Jie Zhang , Elbio Dagotto , Shuai Dong

High-reflectance in many state-of-the-art optical devices is achieved with noble metals. However, metals are limited by losses, and for certain applications, by their high mass density. Using a combination of ab initio and optical transfer…

Amorphous hydrogenated silicon nitride ($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5\times{10^{12}}$…

应用物理 · 物理学 2020-08-18 R K Bommali , S Ghosh , Harsh Gupta , Rafael Pérez Casero , P Srivastava

By taking advantage of the trace approximation, one can gain an enormous computational advantage when solving for the global turbulent transport of impurities. In particular, this makes feasible the study of non-Maxwellian transport coupled…

等离子体物理 · 物理学 2017-04-05 George J. Wilkie , Istvan Pusztai , Ian G. Abel , William Dorland , Tünde Fülöp

Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible…

There is a growing interest in the development of functional metal oxides with mixed ionic electronic conduction for their application in different strategic fields. In particular, ionic transport-related phenomena are of primary importance…

材料科学 · 物理学 2018-12-03 Francesco Chiabrera , Inigo Garbayo , Albert Tarancon

Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…

Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for sensing. Its biocompatible, flexible, and chemically inert nature associated to the…

We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam…

Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a…

介观与纳米尺度物理 · 物理学 2018-11-01 Shao-Gang Xu , Xiao-Tian Li , Yu-Jun Zhao , Wang-Ping Xu , Ji-Hai Liao , Xiu-Wen Zhang , Hu Xu , Xiao-Bao Yang

A wide variety of experimental results and theoretical investigations in recent years have convincingly demonstrated that several transition metal oxides and other materials, have dominant states that are not spatially homogeneous. This…

强关联电子 · 物理学 2009-11-11 Elbio Dagotto

Fast ionic conduction is a defining property of solid electrolytes for all-solid-state batteries. Previous studies have suggested that liquid-like cation motion associated with fast ionic transport can disrupt crystalline symmetry, thereby…

The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…

The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became…

材料科学 · 物理学 2017-11-06 D. Klimm

Superconductivity with transition temperature $T_c=1.7$ K has been reported in bilayer graphene [1,2]. The main factors, which may shed light on the mechanism of the formation of this superconductivity, are the following. Superconductivity…

超导电性 · 物理学 2018-06-22 G. E. Volovik

Disorder-induced ordering and unprecedentedly high radiation tolerance in $\gamma$-phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physics and electronic applications. Importantly, by far,…

Superlattices are promising low-dimensional nanomaterials for thermoelectric technology that is capable of directly converting low-grade heat energy to useful electrical power. In this work, the thermal conductivities of GaAs/Ge…

介观与纳米尺度物理 · 物理学 2017-06-28 Roger Jia , Lingping Zeng , Gang Chen , Eugene A. Fitzgerald

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing…

Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…