相关论文: Tunneling Magnetoresistance Effect in Altermagnets
We analyze the stationary spin-dependent transport through a single-molecule magnet weakly coupled to external ferromagnetic leads. Using the real-time diagrammatic technique, we calculate the sequential and cotunneling contributions to…
Tunneling magnetoresistance (TMR) in a vertical manganite junction was investigated by low-temperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
The recent emergence of van der Waals (vdW) ferromagnets has opened new opportunities for designing spintronic devices. We theoretically investigate the coherent spin-dependent transport properties of the vdW ferromagnet Fe$_4$GeTe$_2$, by…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
Altermagnetism is an unconventional form of antiferromagnetism characterized by momentum-dependent spin polarization of electronic states and zero net magnetization, arising from specific crystalline symmetries. In the presence of…
The antiferroaxial state is emerging as an important ferroic order in condensed matter systems. Here, we establish antiferroaxial altermagnetism as a broadly prevalent, generic, and microscopically grounded multiferroic mechanism, in which…
The spin-dependent transport of the electrons tunneling through a resonant tunneling structure with ferromagnetic multi-terminal under dc and ac fields is explored by means of the nonequilibrium Green function technique. A general…
We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room…
Bringing magnetic metals into superconducting states represents an important approach for realizing unconventional superconductors and potentially even topological superconductors. Altermagnetism, classified as a third basic collinear…
The magnetoresistance (MR) effect in metallic atomic-sized contacts is studied theoretically by means of first-principle electronic structure calculations. We consider three-atom chains formed from Co, Cu, Si, and Al atoms suspended between…
Altermagnets are a newly discovered class of magnetic phases that combine the spin polarization behavior of ferromagnetic band structures with the vanishing net magnetization characteristic of antiferromagnets. Initially proposed for…
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…
Angular momentum transport is one of the cornerstones of spintronics. Spin angular momentum is not only transported by mobile charge carriers, but also by the quantized excitations of the magnetic lattice in magnetically ordered systems. In…
Altermagnets host chirally split magnons that promise unique functionalities for information processing. However, their distinctive transport signatures, crucial for experimental identification and manipulation, remain elusive. Here, we…
The possibility of quantum oscillations of the tunnel conductance and magnetoresistance induced by spin-wave excitations in a ferromagnet-ferromagnet-ferromagnet double barrier tunnel junction, when the magnetizations of the two side…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
We propose altermagnet-superconductor junctions as a way to achieve a thermoelectric response in metals free of external or stray magnetic fields. We combine qualitative analysis in a simplified model with a more rigorous approach based on…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…