相关论文: Overcoming Quantum Resistivity Scaling in Nanoscal…
For the past four decades, cost and features have driven CMOS scaling. Severe lithography and material limitations seen below the 20 nm node, however, are challenging the fundamental premise of affordable CMOS scaling. Just continuing to…
The temperature dependence of the optical properties of the delafossite PdCoO$_2$ has been measured in the a-b planes over a wide frequency range. The optical conductivity due to the free-carrier (intraband) response falls well below the…
The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…
Scaling superconducting quantum processors beyond single dilution refrigerators requires efficient optical interconnects, yet integrating microwave-to-optical (M2O) transducers poses challenges due to frequency mismatches and qubit…
In ballistic transport, the movement of charged carriers is essentially unimpeded by scattering events. In this limit, microscopic parameters such as crystal momentum, spin and quantum phases are well conserved, allowing electrons to…
Understanding the origins of power loss in superconducting interconnects is essential for the energy efficiency and scalability of superconducting digital logic. At microwave frequencies, power dissipates in both the dielectrics and…
We identify a distinct superconducting phase at the interface of a La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (LNSCO)/La$_{1.84}$Sr$_{0.16}$CuO$_4$ (LSCO) epitaxial bilayer system using ac screening measurements. A model based on…
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC…
We demonstrate phase-coherent transport in suspended long-channel Cd3As2 nanowire devices using both direct current (DC) transport and radio-frequency (RF) reflectometry measurements. By integrating Cd3As2 nanowires with on-chip…
The exponentially growing number of interconnected devices in the Internet of Things poses an increasing amount of challenges to the field of cyber security and encryption. For authenticated use and communication, each device must securely…
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam…
Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It…
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…
We have investigated electrical transport in a diffusive multiwalled carbon nanotube contacted using superconducting leads made of Al/Ti sandwich structure. We find proximity-induced superconductivity with measured critical currents up to…
Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, as recently demonstrated in systems of superconducting qubits. However, these qubits have large footprints due to…
Extensive X-ray and neutron scattering experiments and additional transmission electron microscopy results reveal the partial decomposition of Nd2-xCexCuO4 (NCCO) in a low-oxygen-fugacity environment such as that typically realized during…
Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these…
Predicting the compositional phase stability of strongly correlated electron materials is an outstanding challenge in condensed matter physics, requiring precise computations of total energies. In this work, we employ the density functional…
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…
We observe the large enhancement in the dielectric response near the percolation threshold in a composite nanoparticle system consisting of metallic RuO$_2$ grains embedded into dielectric CaCu$_3$Ti$_4$O$_1$$_2$ (CCTO) matrix and annealed…