相关论文: Gate tunable spin-charge interconversion in a grap…
We investigate a novel way to manipulate the spin polarized transmission in a two terminal zigzag graphene nanoribbon in presence of Rashba spin-orbit (SO) interaction with circular shaped cavity engraved into it. A usual technique to…
We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and…
Silicene is a buckled monolayer of silicon. Its electronic properties are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has…
The lack of some spatial symmetries in planar devices with Rashba spin-orbit interaction opens the possibility of producing spin polarized electrical currents in absence of external magnetic field or magnetic impurities. We study how the…
The ability to control heat transport with electrical signals has been an outstanding challenge due to the lack of efficient electrothermal materials. Previous attempts have mainly concentrated on phase-change and layered materials and…
We present a theoretical study of spin-velocity injection (SVI) of a pure spin current (PSC) induced by a linearly polarized light that impinges normally on the surface of two 50\% hydrogenated noncentrosymmetric two-dimensional (2D)…
In spintronics, the ability to transport magnetic information often depends on the existence of a spin current traveling between two different magnetic objects acting as source and probe. A large fraction of this information never reaches…
Atomically thin two-dimensional layer of honeycomb crystalline carbon known as graphene is a promising system for electronics. It has a point-like Fermi surface, which is very sensitive to external potentials. In particular, Zeeman magnetic…
Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto…
We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of…
A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we…
Driving non-superconducting materials into a superconducting state through specific modulation is a key focus in the field of superconductivity. Pressure is a powerful method that can switch a three-dimensional (3D) material between…
Electrical tunability of spin polarization has been a focus in spintronics. Here, we report that the trigonal warping (TW) effect, together with spin-orbit coupling (SOC), can lead to two distinct magnetoelectric effects in low-dimensional…
The induced-proximity effects of nearly commensurate lattice structure of a graphene layer on Ni(111) and Co(0001) substrates in the AC stacking configuration are addressed through an analytical tight-binding approach within the…
Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the…
The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronics applications, since it is not limited by the elemental spin-orbit…
We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
We theoretically investigate spin transport at the interface between the ferromagnetic insulator(FI) and a superconductor(SC). Considering a simple FI-SC interface model, we derive formulas for the spin current and spin-current noise…
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…