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相关论文: Structural Control of Atomic Silicon Wires

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A statistical analysis of the breaking behavior of Ni nanowires is presented. Using molecular dynamic simulations, we have determined the time evolution of both the nanowire atomic structure and its minimum cross section (Sm(t)).…

介观与纳米尺度物理 · 物理学 2009-11-13 P. García-Mochales , R. Paredes , S. Peláez , P. A. Serena

The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…

介观与纳米尺度物理 · 物理学 2023-06-08 Miklós Csontos , Yannik Horst , Nadia Jimenez Olalla , Ueli Koch , Ivan Shorubalko , András Halbritter , Juerg Leuthold

This work presents a theoretical study of the structural and electronic properties of bilayered silicon films under in-plane biaxial strain/stress using density functional theory. Atomic structures of the two-dimensional silicon films are…

材料科学 · 物理学 2016-06-29 Zhonghang Ji , Ruiping Zhou , Lok C. Lew Yan Voon , Yan Zhuang

We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be…

介观与纳米尺度物理 · 物理学 2015-05-14 J. C. H. Chen , O. Klochan , A. P. Micolich , A. R. Hamilton , T. P. Martin , L. H. Ho , U. Zuelicke , D. Reuter , A. D. Wieck

When a flat elastic strip is compressed along its axis, it is bent in one of two possible directions via spontaneous symmetry breaking and forms a cylindrical arc, a phenomenon well known as Euler buckling. When this cylindrical section is…

软凝聚态物质 · 物理学 2018-01-31 Tomohiko G. Sano , Hirofumi Wada

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited…

Despite progress in HfO2 thin-film ferroelectrics, issues like high coercive fields persist, and the dynamics of twisted ferroelectricity remain largely unexplored. Here, we explore how sliding and twisting in bilayer HfO2 enables low…

材料科学 · 物理学 2025-12-05 Jie Sun , Yiheng Shen , Tengfei Cao , Li-Min Liu

We carry out strain-controlled in-situ compression experiments of micron-sized tungsten (W) micropillars in the temperature range 300-900 K, together with simulations of three-dimensional discrete dislocation dynamics (DDD) at the same…

材料科学 · 物理学 2026-02-26 Yang Li , Inam Lalani , Matthew Maron , William Hixson , Biao Wang , Nasr Ghoniem , Giacomo Po

Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si…

介观与纳米尺度物理 · 物理学 2019-05-22 Amintor Dusko , Belita Koiller , Caio Lewenkopf

Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…

In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus…

We present a systematic study of the electronic and magnetic properties of transition-metal (TM) atomic chains adsorbed on the zigzag single-wall carbon nanotubes (SWNTs). We considered the adsorption on the external and internal wall of…

其他凝聚态物理 · 物理学 2009-11-11 Engin Durgun , Salim Ciraci

The puzzling experimental observations of Ag addimer formation on the Si(100) surface upon vapor deposition at low temperature, even as low as 140 K, reported by Huang et al. [Phys. Chem. Chem. Phys. 2021, 23, 4161], is explained by facile…

材料科学 · 物理学 2025-06-11 Alejandro Peña-Torres , Michail Stamatakis , Hannes Jónsson

We analyze the fate of spiral order in a one-dimensional system of localized magnetic moments coupled to itinerant electrons under a voltage bias. Within an adiabatic approximation for the dynamics of the localized spins, and in the…

介观与纳米尺度物理 · 物理学 2024-12-18 Xiaohu Han , Pedro Ribeiro , Stefano Chesi

Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…

材料科学 · 物理学 2025-03-13 Yu-Hsiu Lin , William P. Comaskey , Jose L. Mendoza-Cortes

Significant aspects of advanced quantum technology today rely on rapid control of atomic matterwaves with hyperfine Raman transitions. Unfortunately, efficient Raman excitations are usually accompanied by uncompensated dynamic phases and…

原子物理 · 物理学 2023-05-29 Liyang Qiu , Lingjing Ji , Jiangyong Hu , Yizun He , Yuzhuo Wang , Saijun Wu

We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile…

材料科学 · 物理学 2015-05-14 Laurent Pizzagalli , Julien Godet , Sandrine Brochard

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers…

We have observed millisecond-long coherent evolution of nuclear spins in a quantum wire at 1.2 K. Local, all-electrical manipulation of nuclear spins is achieved by dynamic nuclear polarization in the breakdown regime of the Integer Quantum…

介观与纳米尺度物理 · 物理学 2009-10-01 A. Corcoles , C. J. B. Ford , M. Pepper , G. A. C. Jones , H. E. Beere , D. A. Ritchie

The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This…

材料科学 · 物理学 2009-11-10 Yasumasa Takagi , Yoshihide Yoshimoto , Kan Nakatsuji , Fumio Komori