相关论文: Orbital Current-Driven Magnetization Switching in …

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it is featured by high speed, low power, nearly unlimited…

While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger…

Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…

Electrical manipulation of magnetization by spin-orbit torque (SOT) has shown promise for realizing reliable magnetic memories and oscillators. To date, the generation of transverse spin current and SOT, whether it is of spin Hall effect…

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…

The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…

The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…

Spin current--a flow of electron spins without a charge current--is an ideal information carrier free from Joule heating for electronic devices. The celebrated spin Hall effect, which arises from the relativistic spin-orbit coupling,…

Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…

Accurate quantification of the spin-orbit torques (SOTs) is critical for the identification and applications of new spin-orbitronic effects. One of the most popular techniques to qualify the SOTs is the switching angle shift, where the…

Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…