相关论文: Can a ferroelectric diode be a selector-less, univ…
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…
We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
In the realm of modern materials science and advanced electronics, ferroelectric materials have emerged as a subject of great intrigue and significance, chiefly due to their remarkable property of reversible spontaneous polarization. This…
Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory devices due to its compatibility with current semiconductor…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions…
Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…
This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Future experiments of nuclear and particle physics are moving towards the high luminosity regime, in order to access suppressed processes like rare B decays or exotic charmonium resonances. In this scenario, high rate capability is a key…
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
Rapid advancements in artificial intelligence have given rise to transformative models, profoundly impacting our lives. These models demand massive volumes of data to operate effectively, exacerbating the data-transfer bottleneck inherent…
Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Neural differential equation models have garnered significant attention in recent years for their effectiveness in machine learning applications.Among these, fractional differential equations (FDEs) have emerged as a promising tool due to…