相关论文: A Physics-Based Circuit Model for Magnetic Tunnel …

This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…

Dynamics of a ferromagnetic macrospin (e.g., a free layer of a magnetic tunnel junction (MTJ)) can be described in terms of equivalent capacitor charge $Q$ and inductor flux $\Phi$, in a manner similar to a standard electric LC circuit, but…

This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to…

The significant experimental advances of the last few decades in dealing with the interaction of spin currents and nanomagnets, at the device level, has allowed envisioning a broad class of devices that propose to implement information…

The figures-of-merit for reservoir computing (RC), using spintronics devices called magnetic tunnel junctions (MTJs), are evaluated. RC is a type of recurrent neural network. The input information is stored in certain parts of the…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice…

Recently, multiferroic tunnel junctions (MFTJs) have gained significant spotlight in the literature due to its high tunneling electro-resistance together with its non-volatility. In order to analyze such devices and to have insightful…

We theoretically propose and analyze a Josephson-like magnetic tunnel junction (MTJ) structure that exhibits quantum spin dynamics analogous to those in superconducting Josephson junctions. By exploiting the isomorphism between the…

We present cmtj - a comprehensive simulation package that allows large-scale macrospin simulations for a variety of multilayer spintronics devices. Apart from conventional static simulations, such as magnetoresistance and magnetisation…

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…

Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…

Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their…

Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS)…

The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (Cl) across the series combination of geometric…

Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM, which is ramping to production at major foundries as an eFlash replacement. MTJ switching exhibits a stochastic behavior due to thermal fluctuations, which is…

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…

Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…

We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…