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Owing high conductivity in microcrystalline thin-films, CsSnI3 perovskite is a promising semiconductor for thermoelectrics and optoelectronics. Rapid oxidation of thin-film and intrinsic lattice strain hinders stabilization of the device…

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…

Recent experiments have synthesized Cs2AgBi2I9 by partially substituting Cs+ with Ag+ at the A-site of Cs3Bi2I9, resulting in enhanced charge transport properties compared to Cs3Bi2I9. However, the atomic-scale mechanisms behind this…

材料科学 · 物理学 2025-03-05 Shuhan Li , Siyu Song , Peng Lv , Shihao Wang , Jiawang Hong , Gang Tang

Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of…

材料科学 · 物理学 2019-06-26 Xin Yu Chin , Daniele Cortecchia , Jun Yin , Annalisa Bruno , Cesare Soci

The work carried out first-principles calculations within the framework of density functional theory to study the structural stability of the CsSnI3 compound and the influence of phase transitions on their electronic and optical properties.…

Lead-free tin-based halide perovskites are attractive for flexible and environmentally benign optoelectronics, but their application is limited by the rapid oxidation of Sn2+ to Sn4+ and poor operational stability. Here, we report a…

材料科学 · 物理学 2025-12-24 Letian Dai , Wanru Chen , Quanming Geng , Ying Xu , Guowu Zhou , Nuo Chen , Xiongjie Li

We use scanning probe microscopy to study ion migration in the formamidinium (FA)-containing halide perovskite semiconductor $Cs_{0.22}FA_{0.78}Pb(I_{0.85}Br_{0.15})_3$ in the presence and absence of chemical surface passivation. We measure…

Achieving control over the transport properties of charge-carriers is a crucial aspect of realizing high-performance electronic materials. In metal-halide perovskites, which offer convenient manufacturing traits and tunability for certain…

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…

强关联电子 · 物理学 2014-12-05 Abhijit Biswas , Ki-Seok Kim , Yoon Hee Jeong

La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV…

材料科学 · 物理学 2020-05-05 Hai Jun Cho , Koichi Sato , Mian Wei , Gowoon Kim , Hiromichi Ohta

Recently, we reported [M. Wagner et al., J. Mater. Res. 26, 1886 (2011)] transport measurements on the semiconducting intermetallic system RuIn3 and its substitution derivatives RuIn_{3-x}A_{x} (A = Sn, Zn). Higher values of the…

材料科学 · 物理学 2015-05-30 Deepa Kasinathan , Maik Wagner , Klaus Koepernik , Raul Cardoso-Gil , Yu. Grin , Helge Rosner

Whilst electron correlations were previously recognized to trigger beyond conventional direct current (DC) electronic transportations (e.g. metal-to-insulator transitions, bad metal, thermistors), their respective influences to the…

材料科学 · 物理学 2020-03-17 Jikun Chen , Haifan Li , Jiaou Wang , Xinyou Ke , Binghui Ge , Jinhao Chen , Hongliang Dong , Yong Jiang , Nuofu Chen

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge…

材料科学 · 物理学 2021-04-08 Yuqi Liang , Bingcheng Luo , Huijuan Dong , Danyang Wang

The use of mixed cation absorber composition was considered as an efficient strategy to mitigate the degradation effects in halide perovskite solar cells. Despite the reports about partial stabilization at elevated temperatures, unfavorable…

Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental…

An organic-inorganic halide perovskite of CH3NH3SnI3 with significantly improved structural stability is obtained via pressure-induced amorphization and recrystallization. In situ high-pressure resistance measurements reveal an increased…

The anisotropy of perovskite nanoplatelets (PeNPLs) opens up many opportunities in optoelectronics, including enabling the emission of linearly polarized light. But the limited stability of PeNPLs is a pressing challenge, especially for…

Although it has been recently demonstrated that the laser-assisted (LA) crystallization process leads to the formation of perovskite absorber films of superior photovoltaic performance compared to conventional thermal annealing (TA), the…

We present a systematic first-principles study of substitutional 3d transition-metal (TM) defects in CsPbI3 using the spin-polarized GGA+U framework. TM incorporation is generally energetically favorable and induces lattice distortions that…

材料科学 · 物理学 2025-12-18 Misbah Shaheen , Sheharyar Pervez

Electrical transport in oxide thin films under high pressure remains largely unexplored due to the lack of a universal experimental strategy. Here we develop an approach that enables high-pressure transport measurements in freestanding…

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