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Rhombohedral multilayer graphene has recently emerged as a rich platform for studying correlation driven magnetic, topological and superconducting states. While most experimental efforts have focused on devices with N$\leq 9$ layers, the…

Layered electrides, as typified by Ca$_2$N, are a new class of quasi-two-dimensional materials with low work functions. Using first-principles calculations, we have shown that a graphene layer deposited on Ca$_2$N is doped to $n=5\times…

材料科学 · 物理学 2017-12-20 Takeshi Inoshita , Masaru Tsukada , Susumu Saito , Hideo Hosono

The emergence of flat bands in twisted bilayer graphene leads to an enhancement of interaction effects, and thus to insulating and superconducting phases at low temperatures, even though the exact mechanism is still widely debated. The…

强关联电子 · 物理学 2019-11-15 Tommaso Cea , Niels R. Walet , Francisco Guinea

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during…

介观与纳米尺度物理 · 物理学 2016-10-10 Amithraj Valsaraj , Leonard F. Register , Emanuel Tutuc , Sanjay K. Banerjee

An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally…

介观与纳米尺度物理 · 物理学 2020-07-31 F. Volmer , M. Ersfeld , L. Rathmann , M. Heithoff , L. Kotewitz , K. Watanabe , T. Taniguchi , C. Stampfer , B. Beschoten

Novel systems of layered graphene are attracting interest for theories and applications. The stability, band structures of few-layer graphite films, and their dependence on electric field applied along the c-axis are examined within the…

介观与纳米尺度物理 · 物理学 2009-09-29 Masato Aoki , Hiroshi Amawashi

We report the interesting possibilities related to the plasmonics and the key parameters of optoelectronics, such as the absorbance and the transmittance, in Van der Waals heterostructures of graphene monolayer on 2D transition metal…

介观与纳米尺度物理 · 物理学 2017-03-18 Partha Goswami

Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great…

介观与纳米尺度物理 · 物理学 2021-12-17 Jouda Jemaa Khabthani , Ahmed Missaoui , Didier Mayou , Guy Trambly de Laissardière

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Although sheets of layered van der Waals solids offer great opportunities to custom-design nanomaterial properties, their weak interlayer adhesion challenges structural stability against mechanical deformation. Here, bending-induced…

材料科学 · 物理学 2013-09-05 Pekka Koskinen

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…

材料科学 · 物理学 2015-05-27 J. Slawinska , P. Dabrowski , I. Zasada

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

Controlling the stacking and rotational registry of graphene layers provides a powerful handle on atomic-scale structural reconstructions that alter the electronic landscape at the nanoscale. In particular, this governs how massless and…

The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and…

材料科学 · 物理学 2014-09-09 Wei Yan , Lan Meng , Mengxi Liu , Jia-Bin Qiao , Zhao-Dong Chu , Rui-Fen Dou , Zhongfan Liu , Jia-Cai Nie , Lin He

Electron scattering problem in the monolayer graphene with short-range impurities is considered. The main novel element in the suggested model is the band asymmetry of the defect potential in the 2+1-dimensional Dirac equation. This…

介观与纳米尺度物理 · 物理学 2013-05-29 Natalie E. Firsova

When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena…

超导电性 · 物理学 2016-05-04 Davide Costanzo , Sanghyun Jo , Helmuth Berger , Alberto F. Morpurgo

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene…

介观与纳米尺度物理 · 物理学 2020-07-01 Yulei Han , Yafei Ren , Xinlong Dong , Junjie Zeng , Wei Ren , Zhenhua Qiao

Stacking and twisting 2D van der Waals (vdW) layers have become versatile platforms to tune electron correlation. These platforms rely on exfoliating vdW materials down to a single and few vdW layers. We calculate the intrinsic…

The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological…

介观与纳米尺度物理 · 物理学 2024-03-26 Wenqiang Zhou , Jing Ding , Jiannan Hua , Le Zhang , Kenji Watanabe , Takashi Taniguchi , Wei Zhu , Shuigang Xu

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…

介观与纳米尺度物理 · 物理学 2018-02-21 R. S. Gonnelli , E. Piatti , A. Sola , M. Tortello , F. Dolcini , S. Galasso , J. R. Nair , C. Gerbaldi , E. Cappelluti , M. Bruna , A. C. Ferrari