相关论文: Coexisting Triferroic and Multiple Types of Valley…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
Two-dimensional multiferroic materials are highly sought after due to their huge potential for applications in nanoelectronic and spintronic devices. Here, we predict, based on first-principle calculations, a single phase {\it triferroic}…
Two-dimensional(2D) multiferroic materials hold significant promise for advancing the miniaturization and integration of nanodevices. In this study, we demonstrate that 2D bilayer ScI2, which exhibits ferromagnetic(FM) ordering within each…
The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means.…
Achieving multiferroic two-dimensional (2D) materials should enable numerous functionalities in nanoscale devices. Until now, however, predicted 2D multiferroics are very few and with coexisting yet only loosely coupled (type-I)…
Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor…
Non-volatile manipulation of valley polarization in solids has long been desired for valleytronics applications but remains challenging. Here, we propose a novel strategy for non-volatile manipulating valleys through bilayer stacking, which…
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To…
Multiferroic materials are potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage. Last decades, research on multiferroic materials was focused on three-dimensional (3D) materials. However,…
The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multi-state data storage. Although multiferroics have been broadly…
Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we…
Layers of perovskites, found in 3D materials, 2D heterostructures, and nanotubes, often distort from high symmetry to facilitate dipole polarisation that is exploitable in many applications. Using density-functional theory calculations,…
The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…
Displacive martensitic phase transition is potentially promising in semiconductor based data storage applications with fast switching speed. In addition to traditional phase transition materials, the recently discovered two-dimensional…
Multiferroic materials have garnered wide interest for their exceptional static and dynamical magnetoelectric properties. In particular, type-II multiferroics exhibit an inversion-symmetry-breaking magnetic order which directly induces a…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Altermagnets, a novel class of collinear magnetic materials, exhibit unique spin-split band structures, yet topological insulating states in intrinsic altermagnetic systems are rare. Here, we identify monolayer Fe$_2X_2$O ($X$ = Cl, Br, I)…