相关论文: Luttinger compensated bipolarized magnetic semicon…
Spin-split antiferromagnets have significance for antiferromagnetic (AFM) spintronics due to their momentum dependent spin polarization which can be exploited for the control and detection of the AFM order parameter. Here, we explore the…
Altermagnets feature antiparallel spin sublattices with $d$-, $g$-, or $i$-wave spin order, yielding nonrelativistic spin splitting without net magnetization. We show that embedding a two-dimensional $d$-wave altermagnet in a driven optical…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…
The coexistence of seemingly mutually exclusive properties such as ferromagnetism, ferroelectricity and metallicity in atomically thin materials is the requirement of the hour in electronics as the Moore's law faces an impending end. Only a…
We consider theoretically the possibility of coexisting ferroelectric and metallic altermagnetic order, which has recently been predicted in insulating and semiconducting systems via ab initio calculations. Solving self-consistently a…
Altermagnetism is characterized by even-parity spin-momentum locking in spin-split bands despite zero net magnetization and negligible spin-orbit coupling. Here, we formulate a microscopic framework that links altermagnetic splitting in…
Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of…
The electronic and magnetic structure, including the Heisenberg model exchange interaction parameters, was explored for the recently proposed novel cuprate Cu$_2$F$_5$. Using the DFT+U calculation, it is shown that the compound is formed by…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
Defying the traditional classification into metals and insulators, several materials simultaneously display metallic thermal properties and insulating electric behaviour, as if they hosted quasiparticles carrying entropy but not charge.…
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontaneous polarization and magnetization hinders the efficient…
We report the observation of a compensation point in the temperature dependence of magnetization data of polycrystalline Sm2Al. Magnetization measurements show that this compound magnetically orders at about 150 K. Below this temperature,…
Emerging two-dimensional (2D) magnetic semiconductors represent transformative platforms to explore magneto-optics and opto-spintronic applications. Though 2D opto-spintronics has attracted tremendous research efforts in spin-dependent…
Flexibility for interface engineering, and access to all-optical switching of the magnetization, make synthetic ferrimagnets an interesting candidate for advanced opto-spintronic devices. Moreover, due to their layered structure and…
We present electronic structure calculations in combination with local and non-local many-body correlation effects for the half-metallic ferromagnet CrO$_2$. Finite-temperature Dynamical Mean Field Theory results show the existence of…
Spin-band splitting is a hallmark of altermagnetism, intrinsically linked to magnetic ordering driven by electron correlations. However, recent inconsistencies in the detection of altermagnetism in strongly correlated altermagnet candidates…
Altermagnets, which reconcile zero net magnetization with pronounced spin splitting, offer fresh opportunities for spin-based functionalities in next-generation electronic and spintronic devices. In this paper, we explore the unconventional…
The linear Edelstein effect is a cornerstone phenomenon in spintronics that describes the generation of spin magnetization in response to an applied electric field. Recent theoretical advances have reignited interest in its nonlinear…
The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations…
The Slater-Pauling rule states that L21 Heusler compounds with 24 valence electrons do never exhibit a total spin magnetic moment. In case of strongly localized magnetic moments at one of the atoms (here Mn) they will exhibit a fully…