相关论文: Strong Long-Wave Infrared Optical Response in a To…
The mid-infrared (MIR), far-infrared (FIR) to terahertz (THz) frequencies are the least developed parts of the electromagnetic spectrum for applications. Traditional semiconductor technologies like laser diodes and photodetectors are…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…
Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications.…
Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InS have been proposed as promising thermoelectric materials due to low lattice conductivity, originating from the atomically layered structure, high Seebeck…
Topological materials have attracted considerable attention for their potential in broadband and fast photoresponse, particularly in the infrared regime. However, the high carrier concentration in these systems often leads to rapid…
Topological insulators generally have dielectric bulk and conductive surface states. Consequently, some of these materials have been shown to support polaritonic modes at visible and THz frequencies. At the same time, the optical properties…
The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
We present a system for molecular spectroscopy using a broadband mid-infrared laser with near infrared detection. Difference frequency generation of a Yb:fiber femtosecond laser produced a mid-infrared (MIR) source tunable from 2100-3700…
Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs…
The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological…
The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there…
The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve…
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…
Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been…
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their…