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It is rarely reported that collinear antiferromagnetic (AFM) metals can have anomalous Hall effect (AHE). In this letter, based on symmetry analysis and the first-principles electronic structure calculations, we predict that two existing…

材料科学 · 物理学 2024-03-20 Xiao-Yao Hou , Huan-Cheng Yang , Zheng-Xin Liu , Peng-Jie Guo , Zhong-Yi Lu

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$, and at higher temperatures, $R_{s}$…

We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected…

介观与纳米尺度物理 · 物理学 2026-05-04 Oulin Yu , F. Boivin , A. Silberztein , G. Gervais

A single layer ferromagnetic film magnetized in the plane of an ac current flow, exhibits a characteristic Hall voltage with harmonic and second harmonic components, which is attributed to the presence of spin currents with polarization…

介观与纳米尺度物理 · 物理学 2024-05-07 Soumik Aon , Harekrishna Bhunia , Pratap Kumar Pal , Abu Bakkar Miah , Dhananjaya Mahapatra , Anjan Barman , Partha Mitra

The photo-excitation of multi-layered potassium doped black phosphorus that exists as a gapped semi-Dirac two-dimensional normal insulator (NI), transforms it into a time-reversal symmetry broken Chern insulator (CI). This transition from…

材料科学 · 物理学 2021-08-25 Parijat Sengupta , Shaloo Rakheja

The discovery of magnetic topological semimetals recently attracted significant attention in the field of topology and thermoelectrics. In a thermoelectric device based on the Nernst geometry, an external magnet is required as an integral…

A sizable transverse thermoelectric coefficient N , large to the extent that it potentially serves applications, is predicted to arise, by means of first-principles calculations, in a Skyrmion crystal assumed on EuO monolayer where carrier…

强关联电子 · 物理学 2018-11-21 Yo Pierre Mizuta , Hikaru Sawahata , Fumiyuki Ishii

We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…

介观与纳米尺度物理 · 物理学 2023-09-12 Elisa Maddalena Sala , Petr Klenovský

Metal - organic nanocomposite thin films represent a versatile class of materials whose properties can be effectively tuned through external stimuli. In this study, Ag+C60 and Au+C60 nanocomposite thin films were briefly investigated to…

Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were…

材料科学 · 物理学 2026-01-19 S. S. Das , M. Senthil Kumar

Topologically nontrivial electronic states can give rise to novel anomalous Hall effects. The potential appearance of these effects at room temperature holds promise for their application in magnetic sensing, spintronics, and energy…

介观与纳米尺度物理 · 物理学 2025-01-24 Soumya Sankar , Xingkai Cheng , Tahir Murtaza , Caiyun Chen , Yuqi Qin , Xuezhao Wu , Qiming Shao , Rolf Lortz , Junwei Liu , Berthold Jäck

Transverse magneto-thermoelectric effects are studied in permalloy thin films grown on MgO and GaAs substrates and compared to those grown on suspended SiN membranes. The transverse voltage along platinum strips patterned on top of the…

介观与纳米尺度物理 · 物理学 2016-08-03 M. Schmid , S. Srichandan , D. Meier , T. Kuschel , J. -M. Schmalhorst , M. Vogel , G. Reiss , C. Strunk , C. H. Back

Anomalous Nernst effect, as a thermal partner of anomalous Hall effect, is particularly sensitive to the Berry curvature anomaly near the Fermi level, and has been used to probe the topological nature of quantum materials. In this work, we…

AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition…

材料科学 · 物理学 2016-02-23 Neha Sharma , Shilpam Sharma , K. Prabakar , S. Amirthapandian , S. Ilango , S. Dash , A. K. Tyagi

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…

介观与纳米尺度物理 · 物理学 2019-06-17 Xiong Yao , Bin Gao , Myung-Geun Han , Deepti Jain , Jisoo Moon , Jae Wook Kim , Yimei Zhu , Sang-Wook Cheong , Seongshik Oh

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures…

介观与纳米尺度物理 · 物理学 2024-06-25 Gabriele Pasquale , Zhe Sun , Kenji Watanabe , Takashi Taniguchi , Andras Kis

Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial…

The recent discoveries of surperisingly large anomalous Hall effect in chiral antiderromagnets have triggered extensive research efforts in various fields, ranging from topological condensed-matter physics to antiferromagnetic spintronics,…

材料科学 · 物理学 2024-02-27 Linxuan Song , Feng Zhou , Hang Li , Bei Ding , Xue Li , Xuekui Xi , Yuan Yao , Yong-Chang Lau , Wenhong Wang

The effect of magnetron power on the room temperature 1.54 $\mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon…

材料科学 · 物理学 2019-09-25 Syed Sajjad Hussain , Valerie Brien , Hervé Rinnert , Philippe Pigeat

Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these…

材料科学 · 物理学 2026-03-13 Yufei Zhao , Saswata Mandal , Chao-Xing Liu , Binghai Yan
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