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Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. Unique to two-dimensional (2D) van der Waals materials, the control can be achieved by modifying the stacking order through…

介观与纳米尺度物理 · 物理学 2019-11-27 Weijong Chen , Zeyuan Sun , Lehua Gu , Xiaodong Xu , Shiwei Wu , Chunlei Gao

In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moir\'e superlattices. These moir\'e patterns can drive significant band…

介观与纳米尺度物理 · 物理学 2019-10-01 Nathan R. Finney , Matthew Yankowitz , Lithurshanaa Muraleetharan , K. Watanabe , T. Taniguchi , Cory R. Dean , James Hone

Recently the graphene/SiC interface has emerged as a versatile platform for the epitaxy of otherwise unstable, monoelemental, two-dimensional (2D) layers via intercalation. Intrinsically capped into a van der Waals heterostructure with…

介观与纳米尺度物理 · 物理学 2022-06-23 Philipp Rosenzweig , Hrag Karakachian , Dmitry Marchenko , Ulrich Starke

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal…

介观与纳米尺度物理 · 物理学 2024-10-30 M. Masseroni , M. Gull , A. Panigrahi , N. Jacobsen , F. Fischer , C. Tong , J. D. Gerber , M. Niese , T. Taniguchi , K. Watanabe , L. Levitov , T. Ihn , K. Ensslin , H. Duprez

Layered transition metal dichalcogenides (TMDs) stabilize in multiple structural forms with profoundly distinct and exotic electronic phases. Interfacing different layer types is a promising route to manipulate TMDs' properties, not only as…

Superconductivity (SC) is a ubiquitous feature of graphite allotropes, having been observed in Bernal bilayers[1], rhombohedral trilayers[2], and a wide variety of angle-misaligned multilayers[3-6]. Despite significant differences in the…

Layered materials that stack different lattice symmetries are rare in nature. Misfit layered chalcogenides, which combine square and hexagonal lattices of rocksalt monochalcogenides and transition-metal dichalcogenides, provide a platform…

Twisted magnetic van der Waals materials provide a flexible platform to engineer new forms of unconventional magnetism. Here we demonstrate the emergence of electrically tunable topological moir\'e magnetism in twisted bilayers of the…

强关联电子 · 物理学 2025-11-18 Tiago V. C. Antão , Jose L. Lado , Adolfo O. Fumega

Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich…

Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible…

The degree of electronic coupling between individual layers in few-layer van der Waals heterostructures offers a route to engineer their magnetic, electronic, and optical functionalities. Using state-of-the-art first-principles…

材料科学 · 物理学 2026-01-21 Sijia Ke , Yusuf Shaidu , Jeffrey B. Neaton

We show that in some transition metal dichalcogenides, minority regions of the cleaved sample surfaces show - unexpectedly and anomalously - a finite number of 2D electronic states instead of the expected 3D valence bands. In the case of…

强关联电子 · 物理学 2024-07-01 Matthew D. Watson , Mihir Date , Alex Louat , Niels B. M. Schröter

We report the interesting possibilities related to the plasmonics and the key parameters of optoelectronics, such as the absorbance and the transmittance, in Van der Waals heterostructures of graphene monolayer on 2D transition metal…

介观与纳米尺度物理 · 物理学 2017-03-18 Partha Goswami

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of…

介观与纳米尺度物理 · 物理学 2017-12-21 Fan Ye , Jaesung Lee , Philip X. -L. Feng

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped…

介观与纳米尺度物理 · 物理学 2012-09-06 S. J. Haigh , A. Gholinia , R. Jalil , S. Romani , L. Britnell , D. C. Elias , K. S. Novoselov , L. A. Ponomarenko , A. K. Geim , R. Gorbachev

The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at THz and mid-IR frequencies. However, the requirement of a gating electrode close to graphene and the single `control…

介观与纳米尺度物理 · 物理学 2015-03-03 J. S. Gomez-Diaz , C. Moldovan , S. Capdevilla , J. Romeu , L. S. Bernard , A. Magrez , A. M. Ionescu , J. Perruisseau-Carrier

Low-energy electronic behavior in graphite crystals is highly dependent on the relative stacking arrangement of the constituent layers. Topologically non-trivial electronic states can arise due to interrupted rhombohedral (ABC) stacking,…

介观与纳米尺度物理 · 物理学 2026-04-14 Luke Soneji , Simon Crampin , Marcin Mucha-Kruczynski

Motivated by the recent discoveries of superconductivity in bilayer and trilayer graphene, we theoretically investigate superconductivity and other interaction-driven phases in multilayer graphene stacks. To this end, we study the density…

超导电性 · 物理学 2023-03-06 Areg Ghazaryan , Tobias Holder , Erez Berg , Maksym Serbyn

Ferroelectric van der Waals heterostructures provide a natural platform to design a variety of electrically controllable devices. In this work, we demonstrate that AB bilayer graphene encapsulated in MoTe$_2$ acts as a valley valve that…

材料科学 · 物理学 2023-01-23 Adolfo O. Fumega , Jose L. Lado

We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic…

介观与纳米尺度物理 · 物理学 2018-07-10 Klaus Zollner , Martin Gmitra , Jaroslav Fabian