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相关论文: Unusual topological polar texture in moir\'e ferro…

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The remarkable advances achieved in two-dimensional materials are now being directly transposed to low-dimensional oxides. Here we show using first-principles-based atomistic simulations that ultrathin freestanding ferroelectric layers host…

材料科学 · 物理学 2026-04-28 Franco N. Di Rino , Tim Verhagen

The behaviour of the cross-sectional polarization field is explored for thin nanowires of barium titanate from first-principles calculations. Topological defects of different winding numbers have been obtained, beyond the known textures in…

材料科学 · 物理学 2011-09-19 J. W. Hong , G. Catalan , D. N. Fang , Emilio Artacho , J. F. Scott

Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…

介观与纳米尺度物理 · 物理学 2022-10-07 Laurent Molino , Leena Aggarwal , Vladimir Enaldiev , Ryan Plumadore , Vladimir Falko , Adina Luican-Mayer

Twisted magnetic van der Waals (vdW) materials offer a promising route for multiferroic engineering, yet modeling large-scale moir\'e superlattices remains challenging. Leveraging a newly developed SpinGNN++ framework that effectively…

材料科学 · 物理学 2025-07-24 Haiyan Zhu , Hongyu Yu , Weiqin Zhu , Guoliang Yu , Changsong Xu , Hongjun Xiang

Two-dimensional materials are a highly tunable platform for studying the momentum space topology of the electronic wavefunctions and real space topology in terms of skyrmions, merons, and vortices of an order parameter. Such textures for…

介观与纳米尺度物理 · 物理学 2024-08-30 Wojciech J. Jankowski , Daniel Bennett , Aneesh Agarwal , Gaurav Chaudhary , Robert-Jan Slager

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

材料科学 · 物理学 2020-11-17 Vincent Garcia

Light-induced sliding ferroelectricity in two-dimensional van der Waals materials enables polarization control via relative layer motion. However, polarization switching occurs on the time scale of shear modes (tens of ps) and requires very…

材料科学 · 物理学 2026-05-26 Xiangzhou Zhu , Stefano Mocatti , Matteo Calandra

Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…

材料科学 · 物理学 2026-01-15 Claire Griesbach , Tizian Scharsach , Morgan Trassin , Dennis M. Kochmann

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate moire pattern and…

材料科学 · 物理学 2021-03-02 Yu-Hao Shen , Wen-Yi Tong , He Hu , Jun-Ding Zheng , Chun-Gang Duan

Polar topological textures in ferroelectrics can host internal structure beyond a single integer topological charge. Here, effective-Hamiltonian molecular-dynamics simulations are used to examine whether such internal fractional topology…

材料科学 · 物理学 2026-05-21 Florian Mayer

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…

Ferroelectricity and metallicity cannot coexist due to the screening effect of conducting electrons, and a large number of stable monolayers with 1T/1T$^{\prime}$ phase lack spontaneous polarization due to inversion symmetry. In this work,…

材料科学 · 物理学 2023-09-26 Haohao Sheng , Zhong Fang , Zhijun Wang

Stacking nonpolar, monolayer materials has emerged as an effective strategy to harvest ferroelectricity in two-dimensional (2D) van de Waals (vdW) materials. At a particular stacking sequence, interlayer charge transfer allows for the…

材料科学 · 物理学 2024-11-12 Lingyuan Gao , Laurent Bellaiche

Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in…

Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain experimentally inaccessible. Here we introduce depth-resolved…

The creation of moir\'e superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the…

介观与纳米尺度物理 · 物理学 2024-05-27 J. G. McHugh , V. V. Enaldiev , V. I. Fal'ko

Despite progress in HfO2 thin-film ferroelectrics, issues like high coercive fields persist, and the dynamics of twisted ferroelectricity remain largely unexplored. Here, we explore how sliding and twisting in bilayer HfO2 enables low…

材料科学 · 物理学 2025-12-05 Jie Sun , Yiheng Shen , Tengfei Cao , Li-Min Liu

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate Moire pattern and…

材料科学 · 物理学 2019-12-19 Yu-Hao Shen , Wen-Yi Tong , He Hu , Jun-Ding Zheng , Chun-Gang Duan

Two-dimensional sliding ferroelectrics, with their unique stacking degrees of freedom, offer a different approach to manipulate polarization by interlayer sliding. Bending sliding ferroelectrics inevitably leads to interlayer sliding…

材料科学 · 物理学 2024-08-02 Ri He , Hua Wang , Fenglin Deng , Yuxiang Gao , Binwen Zhang , Yubai Shi , Run-Wei Li , Zhicheng Zhong