相关论文: Confinement-induced altermangetism in RuO$_2$ thin…
We present a methodology based on the calculation of the inelastic scattering from magnons via the spin scattering function in confined geometries such as thin films using a second quantization formalism, for both ferromagnetic and…
Altermagnetism, a recently identified magnetic phase that combines vanishing net magnetization with momentum-dependent spin splitting, challenges the conventional dichotomy between ferromagnets and antiferromagnets. While several candidate…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate…
The pyrochlore vanadates are compelling candidates for next-generation dissipationless devices. Lu2V2O7 and Y2V2O7 are ferromagnetic insulators (Tc ~ 70 K) that are believed to exhibit the magnon Hall effect and are expected to host…
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a…
We report magnetic properties of epitaxial thin films of the itinerant ferromagnet SrRuO3 deposited on the cleaved ab surface of the spin-triplet superconductor Sr2RuO4. The films exhibit ferromagnetic transition near 160 K as in the bulk…
Altermagnets exhibit nonrelativistic spin splitting without net magnetization, establishing a new platform for next-generation spintronic devices. Although altermagnetic tunnel junctions (AMTJs) represent the most promising realizations,…
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually…
We have investigated electronic and magnetic properties of ultrathin SrRuO$_{3}$ (SRO) film grown on (111) SrTiO$_{3}$ substrate using the {\it ab initio} electronic structure calculations. Ru-terminated SRO (111) film suffers from strong…
Altermagnets, a distinct class of antiferromagnets with electronic structures resembling those of d-wave superconductors, exhibit intriguing properties that have gained significant attention in recent research. In this article, we propose…
$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic…
Recent developments have introduced a groundbreaking form of collinear magnetism known as "altermagnetism". This emerging magnetic phase is characterized by robust time-reversal symmetry breaking, antiparallel magnetic order, and…
The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic…
2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the…
In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a…
It has been well established that both in bulk at ambient pressure and for films under modest strains, cubic SrCoO$_{3-\delta}$ ($\delta < 0.2$) is a ferromagnetic metal. Recent theoretical work, however, indicates that a magnetic phase…
Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the…
Altermagnet (AM) is a new proposed magnetic state with collinear antiferromagnetic ground state but presents some transport properties that were only believed to exist in ferromagnets or non-collinear antiferromagnets. To have a…
We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular…
In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas…