相关论文: Confinement-induced altermangetism in RuO$_2$ thin…
The magnetic structure of RuO2 and the Ru atomic configuration are unknown. A magnetic structure is inferred by confronting measured and calculated Bragg diffraction patterns and adjusting the latter to achieve satisfactory agreement. An…
In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi…
Altermagnetism, recently spotlighted in condensed matter physics, presents captivating physical properties and holds promise for spintronics applications. This study delves into the theoretical description and categorization of…
A variety of emergent phenomena has been enabled by interface engineering in the complex oxides heterostructures. While extensive attention has been attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its…
We consider a thin film of $d$-wave altermagnet bent in a stretching-free manner and demonstrate that gradients of the film curvature induce a local magnetization which is approximately tangential to the film. The magnetization amplitude…
The control of electron spins in materials that are simultaneously ferromagnetic and insulating opens up a wealth of quantum phenomena in spin-based electronics. Thin films of europium oxide (EuO) are ideal for the generation and…
We present a high throughput computational search for altermagnetism in two-dimensional (2D) materials based on the Computational 2D Materials Database (C2DB). We start by showing that the symmetry requirements for altermagnetism in 2D are…
Uranium dihydride UH2 is a metastable phase unknown in bulk form but accessible through thin-film synthesis. We prepared UH2 films by reactive dc sputtering on CaF2(001) or Si(001) substrates, the latter equipped with a Mo buffer layer to…
In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial…
Experimental efforts to stabilize ferromagnetism in ultrathin films of transition metal oxides have so far failed, despite expectations based on density functional theory (DFT) and DFT+U. Here, we investigate one of the most promising…
Epitaxially grown RuO2 films on TiO2 (110) exhibit significant in-plane strain anisotropy, with a compressive strain of - 4.7% along the [001] crystalline direction and a tensile strain of +2.3% along [1-10]. As the film thickness…
SrRuO$_3$ (SRO113) is an important material for device physics particularly as one of the best metallic oxide electrodes for ferroelectric devices. This oxide has moderate electron correlations with novel properties including ferromagnetic…
Altermagnets constitute a new class of magnetic materials that combine properties previously thought to be exclusive to either antiferromagnets or ferromagnets, and have unique properties of their own. In particular, a combination of…
We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…
Unconventional magnetism including altermagnetism and unconventional compensated magnetism, characterized by its duality of real-space antiferromagnetic alignment and momentum-space spin splitting, has garnered widespread attention. While…
Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using…
FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external…
The rapid progress in antiferromagnetic and altermagnetic spintronics has led to increased interest in magnetic materials with vanishing net magnetization but strong spin-dependent transport properties. As thin films of such materials…
Altermagnets have emerged as a class of materials combining certain ferromagnetic properties with zero net magnetization. This combination is highly promising for spintronics, especially if a material can be brought to a nanoscale size.…
The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator…