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相关论文: Efficient Spin Transfer in WTe2/Fe3GeTe2 van der W…

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Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

介观与纳米尺度物理 · 物理学 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was…

介观与纳米尺度物理 · 物理学 2017-09-14 Tobias Völkl , Tobias Rockinger , Martin Drienovsky , Kenji Watanabe , Takashi Taniguchi , Dieter Weiss , Jonathan Eroms

The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by…

Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted…

The possibility to achieve charge-to-spin conversion via Rashba spin-orbit effects provide stimulating opportunities toward the development of nanoscale spintronics. Here we use first-principles calculations to study the electronic and…

介观与纳米尺度物理 · 物理学 2021-02-23 Shahid Sattar , J. Andreas Larsson

In the Landau levels of a two-dimensional electron system or when flat bands are present, e.g. in twisted van der Waals bilayers, strong electron-electron interaction gives rise to quantum Hall ferromagnetism with spontaneously broken…

介观与纳米尺度物理 · 物理学 2021-05-05 Hailong Fu , Ke Huang , Kenji Watanabe , Takashi Taniguchi , Jun Zhu

We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect…

The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering…

The discovery of an ever increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling (SOC) and topological systems, calls for some guiding principles to tailor…

材料科学 · 物理学 2021-10-13 Hidekazu Kurebayashi , Jose H. Garcia , Safe Khan , Jairo Sinova , Stephan Roche

Despite their ionic nature, many layered diatomic crystals avoid internal electric polarization by forming a centrosymmetric lattice at their optimal anti-parallel van-der-Waals stacking. Here, we report a stable ferroelectric order…

We use helicity-resolved ultrafast transient absorption spectroscopy to study spin-valley polarization dynamics in a vertically stacked MoSe$_{2}$/WSe$_{2}$ heterostructure. The experimental findings reveal details of interlayer charge…

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing…

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid…

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the…

介观与纳米尺度物理 · 物理学 2018-04-05 Sumit Ghosh , Aurelien Manchon

In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin…

介观与纳米尺度物理 · 物理学 2024-11-05 Zhiwen Zhou , E. A. Szwed , D. J. Choksy , L. H. Fowler-Gerace , L. V. Butov

We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We…

介观与纳米尺度物理 · 物理学 2024-06-13 David Tebbe , Marc Schütte , K. Watanabe , T. Taniguchi , Christoph Stampfer , Bernd Beschoten , Lutz Waldecker

In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that…

介观与纳米尺度物理 · 物理学 2024-05-07 Xian Zhang , Bang Liu , Junsheng Huang , Xinwei Cao , Yunzhe Zhang , Zhi-Xin Guo

Van der Waals (vdW) magnetic heterostructures offer a versatile platform for engineering interfacial spin interactions with atomic precision, enabling nontrivial spin textures and dynamic behaviors. In this work, we report robust asymmetric…

Van der Waals heterostructures (VDWHs) exhibit rich properties and thus has potential for applications, and charge transfer between different layers in a heterostructure often dominates its properties and device performance. It is thus…

Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in…