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相关论文: Large Nernst effect in Te-based van der Waals mate…

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The crystallographic, magnetic, and transport properties of the van der Waals bonded, layered compound CrTe3 have been investigated on single crystal and polycrystalline materials. The crystal structure contains layers made up of lozenge…

The Nernst effect is a versatile phenomenon relevant for energy harvesting, magnetic sensing, probing band topology and charge-neutral excitations. The planar Nernst effect (PNE) generates an in-plane voltage transverse to an applied…

介观与纳米尺度物理 · 物理学 2025-09-17 Rahul Biswas , Harsh Varshney , Amit Agarwal

Power generation through the anomalous Nernst effect in topological Weyl materials has several advantages over conventional thermoelectrics due to the transverse geometry. However, the magnitude of the anomalous Nernst conductivity (ANC) in…

材料科学 · 物理学 2024-12-06 Vsevolod Ivanov , Ella Banyas , Liang Z. Tan

Topological materials with extremely large magnetoresistance exhibit a prognostic feature of resistivity turn-on behaviour. This occurs when the temperature dependence of resistivity changes from metallic to semiconducting characteristics…

材料科学 · 物理学 2021-09-01 V. Nagpal , K. S. Jat , S. Patnaik

Recent observations of large unconventional spin-orbit torques in van der Waals (vdW) materials are driving intense interest for energy-efficient spintronic applications. A key limitation of ferromagnet (FM)/vdW heterostructures is their…

The recent emergence of two-dimensional (2D) van der Waals ferromagnets has provided a new platform for exploring magnetism in the flatland and for designing 2D ferromagnet-based spintronics devices. Despite intensive studies, the anomalous…

材料科学 · 物理学 2019-08-27 Ranran Cai , Wenyu Xing , Huibin Zhou , Boning Li , Yangyang Chen , Yunyan Yao , Yang Ma , X. C. Xie , Shuang Jia , Wei Han

Tungsten ditelluride WTe$_2$ is a type-II Weyl semimetal with electronic properties highly sensitive to external pressure, as demonstrated by the superconductivity emerging under pressure. Here, we study the optical conductivity of the…

材料科学 · 物理学 2020-10-06 M. Krottenmüller , J. Ebad-Allah , V. Süss , C. Felser , C. A. Kuntscher

Layered van~der~Waals materials of the family TaTMTe$_4$ (TM=Ir, Rh, Ru) are showing very interesting electronic properties. Here we report the synthesis, crystal growth and structural characterization of TaIrTe$_4$, TaRhTe$_4$,…

Weyl semimetal (WSM) states can be achieved by breaking spatial-inversion symmetry or time reversal symmetry. However, the anisotropy of the energy reduction contributing to the emergence of WSM states has seldom been investigated by…

Quantum materials with stacked van der Waals (vdW) layers hosting non-trivial band structure topology and magnetism have shown many interesting properties. Using high throughput density functional theory calculations, we design and predict…

The coexistence of antiferromagnetic and ferromagnetic order at room temperature in single-phase van der Waals materials, particularly within the two-dimensional limit, has attracted significant research interest. Nonetheless, such…

We report the observation of a universal scaling of the Nernst coefficient over a wide intermediate temperature range in heavy fermion materials, including the superconductors CeCu$_2$Si$_2$, CeCoIn$_5$, and Ce$_2$PdIn$_8$, the…

强关联电子 · 物理学 2020-07-22 Yi-feng Yang

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not…

介观与纳米尺度物理 · 物理学 2022-02-04 Xirui Wang , Kenji Yasuda , Yang Zhang , Song Liu , Kenji Watanabe , Takashi Taniguchi , James Hone , Liang Fu , Pablo Jarillo-Herrero

In this work we introduce a thermal magnetotorsional effect (TME) as a novel topological response in magnetic Weyl semimetals. We predict that magnetization gradients perpendicular to the Weyl node separation give rise to temperature…

介观与纳米尺度物理 · 物理学 2020-04-29 Long Liang , Teemu Ojanen

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

介观与纳米尺度物理 · 物理学 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl…

介观与纳米尺度物理 · 物理学 2020-08-11 Gang Qiu , Chang Niu , Yixiu Wang , Mengwei Si , Zhuocheng Zhang , Wenzhuo Wu , Peide D. Ye

Based on high-throughput first-principles calculations, we evaluated the anomalous Hall and anomalous Nernst conductivities of 266 transition-metal-based ferromagnetic compounds. Detailed analysis based on the symmetries and Berry…

材料科学 · 物理学 2021-12-08 Ilias Samathrakis , Teng Long , Zeying Zhang , Harish K. Singh , Hongbin Zhang

In a three-dimensional Dirac semimetal the time reversal symmetry (TRS) or the inversion symmetry (IS) is not broken. With either of these symmetries broken, the Dirac points in the three-dimensional band structure split up into pairs of…

介观与纳米尺度物理 · 物理学 2024-06-13 Udai Prakash Tyagi , Partha Goswami

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…

介观与纳米尺度物理 · 物理学 2019-04-04 Wei Li , Xiang Xiao , Huilong Xu

Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and…

材料科学 · 物理学 2018-08-07 J. X. Gong , J. Yang , M. Ge , Y. J. Wang , D. D. Liang , L. Luo , X. Yan , W. L. Zhen , S. R. Weng , L. Pi , C. J. Zhang , W. K. Zhu