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Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…

介观与纳米尺度物理 · 物理学 2025-01-23 Badsha Sekh , Hasibur Rahaman , Ramu Maddu , Pinkesh Kumar Mishra , Tianli Jin , S. N. Piramanayagam

We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…

介观与纳米尺度物理 · 物理学 2022-04-15 Shengjie Shi , R. A. Buhrman

Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs…

介观与纳米尺度物理 · 物理学 2025-06-11 Zelalem Abebe Bekele , Yuan-Yuan Jiang , Kun Lei , Xiukai Lan , Xiangyu Liu , Hui Wen , Ding-Fu Shao , Kaiyou Wang

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

材料科学 · 物理学 2018-08-01 Yi Wang , Rajagopalan Ramaswamy , Hyunsoo Yang

Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low damping-like SOT efficiency per…

材料科学 · 物理学 2019-03-01 Lijun Zhu , Kemal Sobotkiewich , Xin Ma , Xiaoqin Li , Daniel. C. Ralph , Robert A. Buhrman

An experimental study of current-induced magnetization reversal of the Ru/Co/Ru and Ru/Co/Ru/W structures was carried out. In the considered structures, due to the small value of the coercive force comparable in magnitude to the Oersted…

介观与纳米尺度物理 · 物理学 2019-05-22 M. E. Stebliy , A. G. Kolesnikov , A. V. Ognev , E. V. Stebliy , X. Wang , H. F. Han , A. S. Samardak

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for…

We study spin-orbit torques (SOTs) in Ni/Pt bi-layers and multi-layers by ferromagnetic resonance (FMR) and harmonic-Hall measurements. The effect of multi-layering and crystal orientation on field-like (FL) and damping-like (DL) torque…

材料科学 · 物理学 2023-11-27 A. Sud , Y. -C. Lau , J. Brierley , H. Kurebayashi , T. Seki

Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…

Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…

材料科学 · 物理学 2024-03-04 Sheng Li , Bin Lao , Zengxing Lu , Xuan Zheng , Kenan Zhao , Liguang Gong , Tao Tang , Keyi Wu , Run-Wei Li , Zhiming Wang

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…

材料科学 · 物理学 2019-02-19 Yang Liu , Bing Zhou , Jian-Gang Zhu

We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…

介观与纳米尺度物理 · 物理学 2024-03-27 Junyu Tang , Ran Cheng

It has been shown that W in its resistive form possesses the largest spin-Hall ratio among all heavy transition metals, which makes it a good candidate for generating efficient dampinglike spin-orbit torque (DL-SOT) acting upon adjacent…

材料科学 · 物理学 2018-01-12 Ting-Chien Wang , Tian-Yue Chen , Chun-Te Wu , Hung-Wei Yen , Chi-Feng Pai

Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…

材料科学 · 物理学 2017-09-22 Hongyu An , Takeo Ohno , Yusuke Kanno , Yuito Kageyama , Yasuaki Monnai , Hideyuki Maki , Ji Shi , Kazuya Ando

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the…

The 5d transition-metal oxides have a unique electronic structure dominated by strong spin-orbit coupling and hence they can be an intriguing platform to explore spin-current physics. Here, we report on room-temperature generation of…

材料科学 · 物理学 2021-10-07 Kohei Ueda , Naoki Moriuchi , Kenta Fukushima , Takanori Kida , Masayuki Hagiwara , Jobu Matsuno

Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice,…

Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which…