相关论文: N\'eel Spin-Orbit Torque in Antiferromagnetic Quan…
The symmetry considerations that imply a non-zero anomalous Hall effect (AHE) in certain non-collinear antiferromagnets also imply both non-zero orbital magnetization and a net spin magnetization. We have explicitly evaluated the orbital…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
The intricate interplay between magnetism and the topology of electronic structures provides a rich avenue for tailoring materials with unique and potent anomalous transport properties. In this paper, we present a strategy for inducing…
Topological materials have drawn increasing attention owing to their rich quantum properties, as highlighted by a large intrinsic anomalous Hall effect (AHE) in Weyl and nodal-line semimetals. However, the practical applications for…
We theoretically investigate the intrinsic magnon orbital Nernst effect (ONE) in noncollinear antiferromagnets with Kagom\'e spin systems. Our analysis reveals that an externally applied magnetic field induces topological phase transitions…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is…
The anomalous Hall, Nernst and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ display several features upon cooling, like a reversal in the Nernst signal below $T = 50$ K pointing to a topological transition (TT) associated to the…
Electrical readout of 180$^\circ$ switching in strictly compensated collinear antiferromagnets remains a major challenge in antiferromagnetic spintronics. Electrical writing of perpendicularly magnetized ferromagnets by out-of-plane orbital…
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…
The recently discovered material Co$_3$Sn$_2$S$_2$ shows an impressive behavior of the quantum anomalous Hall (QAH) conductivity driven by the interplay between ferromagnetism in the $z$ direction and antiferromagnetism in the $xy$ plane.…
We propose a new mechanism to explain the quantum anomalous Hall (QAH) effect and the electric-field-induced topological phase transition in AB-stacked MoTe${}_2$/WSe${}_2$ moir\'e heterobilayers at $\nu=1$ hole filling. We suggest that the…
Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the…
Electric field induced spin-orbit torques are the crucial mechanism for electric regulations of antiferromagnetic order. However, the spin-orbit torques in antiferromagnets and the induced spin dynamics remain largely unexplored. In this…
Spin Hall effect of spin-texture origin is explored theoretically for antiferromagnetic (AF) metals. It is found that a vector chirality formed by the N\'eel vector gives rise to a topological spin Hall effect. This is topological since it…
We demonstrate that the nontrivial magnetic texture of antiferromagnetic skyrmions (AFM-Sks) promotes a non-vanishing topological spin Hall effect (TSHE) on the flowing electrons. This results in a substantial enhancement of the…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
We search for dynamical magnetoelectric phenomena in three-dimensional correlated systems with spin-orbit coupling. We focus on the antiferromagnetic insulator phases where the dynamical axion field is realized by the fluctuation of the…
Novel noncollinear antiferromagnets with spontaneous time-reversal symmetry breaking, nontrivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics…