相关论文: Measuring Minority Carrier Diffusion Length Using …
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor…
The contemporary superconductive electronics is widely using planar circuits with micrometer-scale elements for a variety of applications. With the rise of complexity of a circuit and increased number of its components, a simple impedance…
The effect of carrier multiplication (CM) in semiconductor nanocrystals is systematically treated by employing an exciton scattering approach. Using projection operators, we reduce the Coulomb coupled multi-exciton dynamics to scattering…
The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards…
The coherent optical injection and temporal decay of spin and charge currents in semiconductor heterostructures is described microscopically, including excitonic effects, carrier LO-phonon and carrier-carrier scattering, as well as…
The measurement of the minority carrier lifetime is a powerful tool in the field of semiconductor material characterization as it is very sensitive to electrically active defects. Furthermore, it is applicable to a wide range of samples…
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse…
Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry or doping. Using…
Scanning superconducting quantum interference device microscopy (SSM) is a scanning probe technique that images local magnetic flux, which allows for mapping of magnetic fields with high field and spatial accuracy. Many studies involving…
Scattering scanning near-field optical microscopy (s-SNOM) is a promising technique for overcoming Abbe diffraction limit and substantially enhancing the spatial resolution in spectroscopic imaging. The s-SNOM works by exposing an atomic…
Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to…
Semantic Communication (SC) is an emerging technology that has attracted much attention in the sixth-generation (6G) mobile communication systems. However, few literature has fully considered the perceptual quality of the reconstructed…
Simulation of detecting photoelectrons using multi-level multi-electron (MLME) finite-difference time-domain (FDTD) method with an application to near-field subwavelength imaging based on semiconductor nanophotodetector (NPD) array is…
Complex Semi-Definite Programming (SDP) is introduced as a novel approach to phase retrieval enabled control of monochromatic light transmission through highly scattering media. In a simple optical setup, a spatial light modulator is used…
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants…
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical…
Halide perovskites have remarkable properties for relatively crudely processed semiconductors, including large optical absorption coefficients and long charge carrier lifetimes. Thanks to such properties, these materials are now competing…
In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are responsible in many cases, but extrinsic dopants may…
We use optimal fluctuation method for a new ballistic $\sigma$-model to study the long time dispersion of conductance $G(t)$ of a mesoscopic sample. In the long time limit the conductance of a $d$-dimensional sample decays as $\exp (-A…
This paper is devoted to photocarrier transport across a two-dimensional graphene-semiconductor Schottky junction. We study linear response to monochromatic light with excitation energy well below the semiconductor band gap. The operation…