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Superconducting epitaxial films of Fe-based layered arsenide, Co-doped SrFe2As2, were grown at 700oC on mixed perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed-laser deposition. Both the epitaxial film and an…

超导电性 · 物理学 2008-09-19 Hidenori Hiramatsu , Takayoshi Katase , Toshio Kamiya , Masahiro Hirano , Hideo Hosono

We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is…

介观与纳米尺度物理 · 物理学 2020-03-06 Dingran Rui , Luzhao Sun , N. Kang , Hailin Peng , Zhongfan Liu , H. Q. Xu

Surface atomic-layer (SAL) superconductors consisting of epitaxially grown metal adatoms on a clean semiconductor surface have been recently established. Compared to conventional metal thin films, they have two important features: i)…

介观与纳米尺度物理 · 物理学 2015-08-05 Takashi Uchihashi

Transition metal aluminum nitrides are a technologically important class of multifunctional ceramics, however, the HfAlN system remains largely unexplored. We investigate phase stability, nanostructure design, and mechanical behavior of…

The past two decades have seen an explosion of work on Josephson junctions containing ferromagnetic materials. Such junctions are under consideration for applications in digital superconducting logic and memory. In the presence of the…

超导电性 · 物理学 2024-04-05 Norman O. Birge , Nathan Satchell

Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $\Delta$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the…

超导电性 · 物理学 2009-11-13 N. A. Court , A. J. Ferguson , R. G. Clark

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most…

超导电性 · 物理学 2017-08-02 X. Wu , J. L. Long , H. S. Ku , R. E. Lake , M. Bal , D. P. Pappas

Josephson junctions with iron pnictides open the way for fundamental experiments on superconductivity in these materials and their application in superconducting devices. Here, we present hybrid Josephson junctions with a…

超导电性 · 物理学 2010-11-10 S. Schmidt , S. Döring , F. Schmidl , V. Grosse , P. Seidel , K. Iida , F. Kurth , S. Haindl , I. Mönch , B. Holzapfel

We have realized submicron tunnel ferromagnetic Al/AlO$_x$/Al/Ni$_{80}$Fe$_{20}$/Al Josephson junctions (JJs) in Manhattan-style configuration for qubit applications. These junctions have been designed to lie within the energy range of…

超导电性 · 物理学 2026-01-15 R. Satariano , R. Ferraiuolo , F. Calloni , H. G. Ahmad , D. Gatta , F. Tafuri , A. Bruno , D. Massarotti

We report the successful growth of epitaxial thin films of FeSe$_{1-x}$S$_x$ with $x \leq 0.43$ via pulsed laser deposition. As S content increases, the nematic transition temperature, $T_{\mathrm s}$, decreases systematically and the…

超导电性 · 物理学 2018-07-04 Fuyuki Nabeshima , Tomoya Ishikawa , Ken-ichi Oyanagi , Masataka Kawai , Atsutaka Maeda

Superconducting qubits in today's quantum processing units are typically fabricated with angle-evaporated aluminum--aluminum-oxide--aluminum Josephson junctions. However, there is an urgent need to overcome the limited reproducibility of…

The physics of the "Pi" phase shift in ferromagnetic Josephson junctions enables a range of applications for spin-electronic devices and quantum computing. In this respect our research is devoted to the evaluation of the best materials for…

材料科学 · 物理学 2008-07-08 Samanta Piano

We have fabricated and characterized asymmetric gap-engineered junctions and transmon devices. To create Josephson junctions with asymmetric gaps, Ti was used to proximitize and lower the superconducting gap of the Al counter-electrode. DC…

Cd3As2 is a three-dimensional topological Dirac semimetal with connected Fermi-arc surface states. It has been suggested that topological superconductivity can be achieved in the nontrivial surface states of topological materials by…

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…

Hydrogen contamination in Josephson junctions is a potential source of device-to-device variability and two-level-system loss in superconducting qubits. In this work, we investigate hydrogen incorporation in oxidized aluminum barriers by…

量子物理 · 物理学 2026-05-26 Yu Zhu , Aldilene Saraiva-Souza , Félix Beaudoin , Hong Guo

The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show…

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct…

Quantum technologies require a new generation of superconducting electronic devices and circuitry. However, the superconducting materials used to construct them are restricted to a class of bulk superconductors. Gold films grown in contact…

The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline…