相关论文: Domain wall reactions in multiple-order parameter …

Domain switching pathways in ferroelectric materials visualized by dynamic Piezoresponse Force Microscopy (PFM) are explored via variational autoencoder (VAE), which simplifies the elements of the observed domain structure, crucially…

Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided…

To understand and harness the physical mechanisms of ferroelectric Hafnium Zirconium Oxide (HZO)-based devices, there is a need for clear understanding of domain interactions, their dynamics, negative capacitance effects, and other…

While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field ($E_c$) for polarization switching. Unraveling the atomistic…

Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…

The Landau theory of 180 degrees domain walls in BaTiO3 type ferroelectric particles is presented. Results of exact description of domain walls in bulk enabled us to formulate variational approach to theory of domain walls in corresponding…

The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve…

Domain wall motion underpins emerging spintronic technologies, such as high-speed racetrack devices and THz logic, and accelerating walls quickly is a key challenge on the path to faster devices. Recent experimental advances introduced…

Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…

We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering…

Polarization switching in ferroelectric BaTiO3 can proceed through fundamentally different mechanisms - yet the conditions that determine which pathway is realized remain poorly understood. Using machine-learning potential-based molecular…

Thin ferroelectric BaTiO$_3$ films often exhibit continuous transitions instead of the first-order behavior of bulk crystals, a discrepancy usually attributed to epitaxial strain or dimensionality. Using quasi-adiabatic nanocalorimetry on…

We discover that the way spin-waves exert magnetic torques in multiferroic materials can cause not only domain wall motion, but also magnetization dynamics for homogeneous magnetization textures. Interestingly, the domain wall motion can be…

The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and…

Magnetic domain wall motion has recently garnered significant interest as a physical mechanism to enable energy-efficient, next-generation brain-inspired computing architectures. However, realizing all behaviors required for neuromorphic…

Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic or otherwise non-electric order, and the electric polarization, which is induced by the primary order…

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…

Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…

Chemical reaction rates must increasingly be determined in systems that evolve under the control of external stimuli. In these systems, when a reactant population is induced to cross an energy barrier through forcing from a temporally…

A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…