相关论文: Quantifying Implantation Induced Damage and Point …
Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study. Through multislice electron scattering simulations and…
Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a…
Size effects are ubiquitous in the structural, mechanical, and physical properties of materials, making it highly desirable to study the intrinsic properties of thick objects through high-resolution structural analysis in transmission…
Transmission electron microscopes use electrons with wavelengths of a few picometers, potentially capable of imaging individual atoms in solids at a resolution ultimately set by the intrinsic size of an atom. Unfortunately, due to…
While multislice electron ptychography can provide thermal-vibration limited resolution and 3D information, it relies on the proper selection of many intertwined experimental and computational parameters. Here, we outline a theoretical…
We propose algorithms based on an optimisation method for inverse multislice ptychography in, e.g. electron microscopy. The multislice method is widely used to model the interaction between relativistic electrons and thick specimens. Since…
Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections…
Electron irradiation-induced damage is often the limiting factor in imaging materials prone to ionization or electronic excitations due to inelastic electron scattering. Quantifying the related processes at the atomic scale has only become…
A combined experimental and computational study of the recrystallization process induced by swift heavy ions in pre-damaged silicon carbide crystals was reported in a recent paper by Debelle et al. [Phys. Rev. B 86, 100102(R) (2012)]. In…
In photon upconverting core-shell nanoparticles, structure strongly dictates performance. Conventional imaging in scanning transmission electron microscopy has sufficient resolution to probe the atomic structure of these nanoparticles, but…
Macroporous silicon is widely employed in sensing and optoelectronic applications due to its large internal surface area and adjustable pore structure. However, quantitative correlations between morphology and functionality require…
A recently developed Projection-based Digital Image Correlation (P-DVC) method is here extended to 4D (space and time) displacement field measurement and mechanical identification based on a single radiograph per loading step instead of…
Multislice electron ptychography (MEP) is an inverse imaging technique that computationally reconstructs the highest-resolution images of atomic crystal structures from diffraction patterns. Available algorithms often solve this inverse…
Resolving single atoms in large-scale volumes has been a goal for atomic resolution microscopy for a long time. Electron microscopy has come close to this goal using a combination of advanced electron optics and computational imaging…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…
We present a scalable method for electrically tuning multiple spatially separated quantum dots embedded in photonic crystal waveguides. Ion implantation into the top p-doped layer of a p-i-n diode creates high-resistivity tracks, providing…
Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated…
We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for…
Electron ptychography provides highly sensitive, dose efficient phase images which can be corrected for aberrations after the data has been acquired. This is crucial when very precise quantification is required, such as with sensitivity to…