相关论文: Dirac excited state quenching in graphene

We show how strongly interacting two-dimensional Dirac fermions can be realized with ultracold atoms in a two-dimensional optical square lattice with an experimentally realistic, inherent gauge field, which breaks time-reversal and…

Electrons moving in graphene behave as massless Dirac fermions, and they exhibit fascinating low-frequency electrical transport phenomena. Their dynamic response, however, is little known at frequencies above one terahertz (THz). Such…

Low-energy single-electron dynamics in graphene monolayers and similar nanostructures is described by the Dirac model, being a 2+1 dimensional version of massless QED with the speed of light replaced by the Fermi velocity v_{F}=c/300.…

This review aims at a theoretical discussion of Dirac points in two-dimensional systems. Whereas Dirac points and Dirac fermions are prominent low-energy electrons in graphene (two-dimensional graphite), research on Dirac fermions in…

In this work, we present a semi-analytical expression for the temperature dependence of a spin-resolved dynamical density-density response function of massless Dirac fermions within the Random Phase Approximation. This result is crucial in…

The nonequilibrium dynamics of carriers and phonons in graphene is investigated by solving the microscopic kinetic equations with the carrier-phonon and carrier-carrier Coulomb scatterings explicitly included. The Fermi distribution of hot…

In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point…

Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band…

For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing…

We reveal that optical saturation of the low-energy states takes place in graphene for arbitrarily weak electromagnetic fields. This effect originates from the diverging field-induced interband coupling at the Dirac point. Using…

The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for…

We consider single-layer plane graphene with electronic excitations described by the Dirac equation. Using a known representation of the polarization tensor in terms of the spinor loop we show the existence of surface modes, i.e., of…

We study the thermal and electric transport of a fluid of interacting Dirac fermions as they arise in single-layer graphene. We include Coulomb interactions, a dilute density of charged impurities and the presence of a magnetic field to…

We report evidence of nonequilibrium hot carriers extraction from graphene by gate-dependent photocurrent study. Scanning photocurrent excited by femtosecond pulse laser shows unusual gate dependence compared with continuous wave (CW) laser…

A degenerate pump--probe technique is used to investigate the non equilibrium carrier dynamics in multi--layer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation ($\sim 50$ fs) of the…

We study the superconducting phase transition, both in a graphene bilayer and in graphite. For that purpose we derive the mean-field effective potential for a stack of graphene layers presenting hopping between adjacent sheets. For…

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising…

We discuss the conditions under which the predicted (but not yet observed) zero-field interlayer excitonic condensation in double layer graphene has a critical temperature high enough to allow detection. Crucially, disorder arising from…

We theoretically study the Dirac fermion dynamics in a graphene monolayer in the presence of an applied ultrafast laser pulse. The pulse has the duration of a few femtoseconds and the amplitude of ~ 0.1 - 0.5 $\mathrm{V/\AA}$. The waveform…