相关论文: Donor-bound-exciton strain microscopy in silicon d…
As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain…
Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon…
Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy…
The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities.…
Excitonic stimulated emission provides a promising mechanism and route to achieve low-threshold semiconductor lasers for micro-nano optoelectronic integrations. However, excitonic stimulated emission from quantum structure-free…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A…
Exciton-phonon interactions govern the optical response of semiconductors, yet disentangling multiple coupling channels in lead halide perovskites remains challenging. We investigate CsPbBr3 microcrystals using photoluminescence, Raman and…
Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as…
Using d. functional theory (DFT) computations, the authors demonstrated a substantial skeletal relaxation when the structure of 2,5-bis-[4-anthracene-9-yl-phenyl]-1,1-dimethyl-3,4-diphenyl-silole (BAS) is optimized in the gas-phase…
Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the…
Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using…
The effect of tensile stress on magnetoimpedance (MI) in CoMnSiB amorphous wires at microwave frequencies (0.5-3 GHz) is investigated both experimentally and theoretically. In the presence of the dc bias magnetic field of the order of the…
Micro-Raman spectroscopy has become an important tool in probing thermophysical behavior in emerging functional materials such as two-dimensional (2D) layered structures. Localized heating by the focused Raman excitation laser beam is…
The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…
Understanding irradiation-induced strain in silicon carbide (SiC) is essential for designing radiation-tolerant ceramic materials. However, conventional methods often fail to resolve nanoscale strain gradients, especially in polycrystalline…
Optically generated excitons dictate the absorption and emission spectrum of doped semiconductor transition metal dichalcogenide monolayers. We show that upon increasing the electron density, the elementary optical excitations develop a…
A method for the calibration of a Silicon Position Sensitive Detector is described. From the combination of the signals collected at the ends of the resistive electrode, energy and angle of the hitting particle are reconstructed with a…