相关论文: Spin relaxation in graphite due to spin-orbital-ph…
In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene…
Microscopic coupling between the electron spin and the lattice vibration is responsible for an array of exotic properties from morphic effects in simple magnets to magnetodielectric coupling in multiferroic spinels and hematites.…
We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the…
Spin dephasing by the Dyakonov-Perel mechanism in metallic films deposited on insulating substrates is revealed, and quantitatively examined by means of density functional calculations combined with a kinetic equation. The…
We investigate nuclear spin-lattice relaxation data in the normal state of optimally doped YBaCuO_7 by analyzing the contributions to the relaxation rate of the copper, planar oxygen and yttrium along the directions perpendicular to the…
The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various…
We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using $\textit{ab initio}$ approaches. Combining $\text{GW}$-Bethe-Salpeter equation…
We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin…
We combine the theoretical method of calculating spin wave excitation with the finite-temperature modeling and calculate the magnon-phonon relaxation time in the technologically important material Yttrium iron garnet (YIG) from first…
A spin-1 transverse Ising model with longitudinal crystal field in a longitudinal magnetic field is examined by introducing an effective field approximation (IEFT) which includes the correlations between different spins that emerge when…
Metal halide perovskites make up a promising class of materials for semiconductor spintronics. Here we report a systematic investigation of coherent spin precession, spin dephasing and spin relaxation of electrons and holes in two hybrid…
We use semiclassical Monte Carlo approach along with spin density matrix calculations to model spin polarized electron transport. The model is applied to germanium nanowires and germanium two dimensional channels to study and compare spin…
We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 {\mu}m at room temperature, the…
Spin relaxation in a quantum Hall ferromagnet, where filling is $\nu=1, 1/3, 1/5,...$, can be considered in terms of spin wave annihilation/creation processes. Hyperfine coupling with the nuclei of the GaAs matrix provides spin…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Spin-phonon coupling is the main drive of spin relaxation and decoherence in solid-state semiconductors at finite temperature. Controlling this interaction is a central problem for many disciplines, ranging from magnetic resonance to…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
The density matrix formalism is applied to calculate the spin-relaxation time for two-dimensional systems with a hierarchy of spin-orbit couplings, such as Rashba-type, Dresselhaus-type and so on. It is found that the spin-relaxation time…