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Iontronics is a burgeoning paradigm that employs ions in solution as information carriers for sensing and computing, e.g., in neuromorphic devices. The fundamentally different working principle as compared to electronics requires novel…

Like their larger micron-scale counterparts, {\AA}ngstr\"om-scale chemically self-propelled motors use asymmetric catalytic activity to produce self-generated concentration gradients that lead to directed motion. Unlike their micron-scale…

软凝聚态物质 · 物理学 2014-05-19 Peter H. Colberg , Raymond Kapral

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…

In this work, a novel electrospun conductive polymer nanocomposite made of polycaprolactone with an exohedral complex made of multiwalled carbon nanotubes and fullerene C60 was prepared and characterized. The preparation was straightforward…

The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…

元胞自动机与格子气 · 物理学 2015-06-03 Andrew Adamatzky , Leon Chua

Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs)…

介观与纳米尺度物理 · 物理学 2026-03-02 R. Leal Martir , A. J. T. van der Ree , M. H. Aguirre , G. Palasantzas , D. Rubi , M. J. Sánchez

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation…

介观与纳米尺度物理 · 物理学 2020-05-21 Ke Wang , Hai-Ou Li , Gang Luo , Xin Zhang , Fang-Ming Jing , Rui-Zi Hu , Yuan Zhou , He Liu , Gui-Lei Wang , Gang Cao , Ming Xiao , Hong-Wen Jiang , Guo-Ping Guo

Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to…

The use of oxide glasses is pervasive throughout everyday amenities and commodities. Such glasses are typically electrical insulators, and endowing them with electrical conductivity without changing their salutary mechanical properties,…

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…

新兴技术 · 计算机科学 2026-01-14 Valeriy A. Slipko , Alon Ascoli , Fernando Corinto , Yuriy V. Pershin

With an eye towards next-generation, smart, micro/nanofluidic devices, capable of responding to external stimuli or changes in environment, we demonstrate a means to achieve dynamic control of the spatio-temporal properties of the electric…

流体动力学 · 物理学 2017-08-08 Alicia M Boymelgreen , Tov Balli , Touvia Miloh , Gilad Yossifon

We report computer simulations of oscillatory athermal quasi-static shear deformation of dense amorphous samples of a three dimensional model glass former. A dynamical transition is observed as the amplitude of the deformation is varied:…

无序系统与神经网络 · 物理学 2015-06-15 Davide Fiocco , Giuseppe Foffi , Srikanth Sastry

Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they…

应用物理 · 物理学 2021-02-03 Sanjoy Kumar Nandi , Sujan Kumar Das , Caleb Estherby , Angus Gentle , Robert G. Elliman

A current-carrying resonant nanoscale device, simulated by non-adiabatic molecular dynamics, exhibits sharp activation of non-conservative current-induced forces with bias. The result, above the critical bias, is generalized rotational…

介观与纳米尺度物理 · 物理学 2012-09-21 Daniel Dundas , Brian Cunningham , Claire Buchanan , Asako Terasawa , Anthony T. Paxton , Tchavdar N. Todorov

Open-system approaches are gaining traction in the simulation of charge transport in nanoscale and molecular electronic devices. In particular, "extended reservoir" simulations, where explicit reservoir degrees of freedom are present, allow…

介观与纳米尺度物理 · 物理学 2017-10-23 Daniel Gruss , Alex Smolyanitsky , Michael Zwolak

Three-terminal electrochemical ionic synapses (EIoS) have recently attracted interest for in-memory computing applications. These devices utilize electrochemical ion intercalation to modulate the ion concentration in the channel material.…

介观与纳米尺度物理 · 物理学 2025-08-01 Michael L. Li , Dingyu Shen , Jesus A. del Alamo , Martin Z. Bazant

Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not…

Molecular devices, as future electronics, seek low-resistivity contacts for the energy saving. At the same time, the contacts should intensify desired properties of tailored electronic elements. In this work, we focus our attention on two…

介观与纳米尺度物理 · 物理学 2015-06-02 Malgorzata Wierzbowska , Michal F. Rode , Mikolaj Sadek , Andrzej L. Sobolewski

We investigate bistability and memory effects in a molecular junction weakly coupled to metallic leads with the latter being subject to an adiabatic periodic change of the bias voltage. The system is described by a simple Anderson-Holstein…

介观与纳米尺度物理 · 物理学 2012-09-20 Andrea Donarini , Abdullah Yar , Milena Grifoni

Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This…

材料科学 · 物理学 2013-05-29 H. G. Silva , Y. G. Pogorelov
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