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Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order…

Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with…

材料科学 · 物理学 2024-01-31 Wen Jin , Xinlu Li , Gaojie Zhang , Hao Wu , Xiaokun Wen , Li Yang , Jie Yu , Bichen Xiao , Wenfeng Zhang , Jia Zhang , Haixin Chang

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM N\'eel vector is used as a state variable. Efficient electric control and detection of the N\'eel vector are critical for spintronic applications.…

材料科学 · 物理学 2024-06-07 Ding-Fu Shao , Evgeny Y. Tsymbal

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…

Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…

The field of 2D magnetic materials has paved the way for the development of spintronics and nanodevices with new functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has…

材料科学 · 物理学 2023-10-05 Lishu Zhang , Hui Li , Yanyan Jiang , Zishen Wang , Tao Li , Sumit Ghosh

Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…

材料科学 · 物理学 2025-01-08 Zhi Yan , Dan Qiao , Wentian Lu , Xinlong Dong , Xiaohong Xu

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…

介观与纳米尺度物理 · 物理学 2025-12-04 Xiaolin Ren , Ruizi Liu , Yiyang Zhang , Yuting Liu , Xuezhao Wu , Kun Qian , Kenji Watanabe , Takashi Taniguchi , Qiming Shao

Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…

介观与纳米尺度物理 · 物理学 2016-08-16 Sangeeta Sahoo , Takis Kontos , Jürg Furer , Christian Hoffmann , Matthias Gräber , Audrey Cottet , Christian Schönenberger

Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its…

材料科学 · 物理学 2019-09-23 P. Nemec , M. Fiebig , T. Kampfrath , A. V. Kimel

We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering…

介观与纳米尺度物理 · 物理学 2021-07-15 Xue-Chao Zhai , Ziming , Xu , Qirui Cui , Yingmei Zhu , Hongxin Yang , Yaroslav M. Blanter

We assess the potential of the ferrimagnetic spinel ferrites CoFe2O4 and NiFe2O4 to act as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic structure calculated by means of first-principles density…

材料科学 · 物理学 2015-06-12 Nuala M. Caffrey , Daniel Fritsch , Thomas Archer , Stefano Sanvito , Claude Ederer

Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…

材料科学 · 物理学 2024-09-04 Kartik Samanta , Ding-Fu Shao , Evgeny Y. Tsymbal

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…

材料科学 · 物理学 2018-02-20 V. Baltz , A. Manchon , M. Tsoi , T. Moriyama , T. Ono , Y. Tserkovnyak

We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we…

介观与纳米尺度物理 · 物理学 2015-05-13 C. Wang , Y. -T. Cui , J. Z. Sun , J. A. Katine , R. A. Buhrman , D. C. Ralph

The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW…

Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures…

材料科学 · 物理学 2024-03-21 Boyuan Chi , Leina Jiang , Yu Zhu , Guoqiang Yu , Caihua Wan , Jia Zhang , Xiufeng Han

The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$).…

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