相关论文: A 1.8-um pitch, 47-ps jitter SPAD Array in 130nm S…

This paper presents a low power, low jitter LC phase locked loop (PLL) which has been designed and fabricated in a commercial 0.25-um Silicon-on-Sapphire CMOS technology. Random jitter and deterministic jitter of the PLL are 1.3 ps and 7.5…

Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these…

A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…

A pico-second timing (PIST) front-end electronic chip has been developed using $55~\mathrm{nm}$ CMOS technology for future electron-positron collider experiments (namely Higgs factories). Extensive tests have been performed to evaluate the…

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as…

We present the first 1Mpixel SPAD camera ever reported. The camera features 3.8ns time gating and 24kfps frame rate; it was fabricated in 180nm CIS technology. Two pixels have been designed with a pitch of 9.4$\mu$m in 7T and 5.75T…

We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD…

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…

High-frequency gating InGaAs/InP single-photon detectors (SPDs) are widely used for applications requiring single-photon detection in the near-infrared region such as quantum key distribution. Reducing SPD size is highly desired for…

We demonstrate sub-100-attosecond timing jitter optical pulse trains generated from free-running, 77.6-MHz repetition-rate, mode-locked Er-fiber lasers. At -0.002(\pm0.001) ps2 net cavity dispersion, the rms timing jitter is 70 as (224 as)…

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m…

In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation…

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…

The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate…

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m.…

Single photon avalanche diode (SPAD) arrays have proven themselves as serious candidates for time of flight positron emission tomography (PET). Discrete readout schemes mitigate the low-noise requirements of analog schemes and offer very…

Radiation tolerant, high speed and low power serializer ASIC is critical for optical link systems in particle physics experiments. Based on a commercial 0.25 um silicon-on-sapphire CMOS technology, we design a 16:1 serializer with 5 Gbps…

Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…

We develop a compact four-port superconducting switch with a tunable operating frequency in the range of 4.8 GHz -- 7.3 GHz. Isolation between channel exceeds 20~dB over a bandwidth of several hundred megahertz, exceeding 40 dB at some…

We demonstrate 14.3-attosecond timing jitter [integrated from 10 kHz to 94 MHz offset frequency] optical pulse trains from 188-MHz repetition-rate mode-locked Yb-fiber lasers. In order to minimize the timing jitter, we shorten the non-gain…