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相关论文: Optimal field-free magnetization switching via spi…

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It is demonstrated by means of the optimal control theory that the energy cost of the spin-orbit torque induced reversal of a nanomagnet with perpendicular anisotropy can be strongly reduced by proper shaping of both in-plane components of…

介观与纳米尺度物理 · 物理学 2022-04-20 Sergei M. Vlasov , Grzegorz J. Kwiatkowski , Igor S. Lobanov , Valery M. Uzdin , Pavel F. Bessarab

We study dynamics of the magnetization coupled to the surface Dirac fermions of a three di- mensional topological insulator. By solving the Landau-Lifshitz-Gilbert equation in the presence of charge current, we find current induced…

介观与纳米尺度物理 · 物理学 2015-05-28 Takehito Yokoyama

Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…

The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…

介观与纳米尺度物理 · 物理学 2015-07-15 Jing Wang , Biao Lian , Shou-Cheng Zhang

Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…

介观与纳米尺度物理 · 物理学 2017-04-05 Elina Locane , Piet W. Brouwer

We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…

Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…

For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT…

We propose a field-free switching mechanism that utilizes two spatially orthogonal spin-orbit torque (SOT) currents. Initially applied simultaneously, one of the currents is subsequently switched off. The superposition of these two currents…

介观与纳米尺度物理 · 物理学 2024-04-01 Dieter Suess , Claas Abert , Sebastian Zeilinger , Florian Bruckner , Sabri Koraltan

Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…

材料科学 · 物理学 2020-09-15 Takahiro Chiba , Takashi Komine

Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…

材料科学 · 物理学 2025-07-30 Yanyan Yang , Weiwei Lin

Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is…

We study the time-development processes of spin and charge transport phenomena in a topological Dirac semimetal attached to a ferromagnetic insulator with a precessing magnetization. Compared to conventional normal metals, topological Dirac…

材料科学 · 物理学 2020-01-01 Takahiro Misawa , Kentaro Nomura

Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…

介观与纳米尺度物理 · 物理学 2025-01-23 Badsha Sekh , Hasibur Rahaman , Ramu Maddu , Pinkesh Kumar Mishra , Tianli Jin , S. N. Piramanayagam

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…

We investigate theoretically the spin torque and magnetization dynamic in a thin ferromagnetic (FM) layer with spatially varying magnetization. The FM layer is deposited on the surface of a topological insulator (TI). In the limit of the…

介观与纳米尺度物理 · 物理学 2013-03-29 Ji Chen , Mansoor Bin Abdul Jalil , Seng Ghee Tan

In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…

材料科学 · 物理学 2020-02-07 Dong-Kyu Lee , Kyung-Jin Lee

We study a magnetization reversal by an electric current pulse in a superconductor/insulating ferromagnet/superconductor Josephson junction placed on top of a 3D topological insulator. It is demonstrated that such a system is perspective…

超导电性 · 物理学 2020-10-21 I. V. Bobkova , A. M. Bobkov , I. R. Rahmonov , A. A. Mazanik , K. Sengupta , Yu. M. Shukrinov

Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve…

The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is…

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