相关论文: Topological spin-torque diode effect in skyrmion-b…
Quantum simulation with controllable many-body platforms offers a powerful route to exploring complex phases and dynamics that are difficult to access in natural materials. Among these, topological spin textures such as skyrmions are…
Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession,…
Skyrmions are topologically protected, two-dimensional, localized hedgehogs and whorls of spin. Originally invented as a concept in field theory for nuclear interactions, skyrmions are central to a wide range of phenomena in condensed…
Topological superconductors are associated with the appearance of Majorana bound states, with promising applications in topologically protected quantum computing. In this Letter, we study a system where a skyrmion crystal is interfaced with…
We unveil novel spin-orbit torque mechanisms driven by topological edge states in magnetic graphene-based devices. Within the energy gap, a damping-like torque plateau emerges within the quantum anomalous Hall phase upon breaking…
Spin current offers a promising route toward energy-efficient and high-speed information processing. Developing efficient methods for their generation remains a central challenge in spintronics. Here, we investigate spin current generation…
Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have…
Magnetic skyrmions are promising spin textures for building next-generation magnetic memories and spintronic devices. Nevertheless, one of the major challenges in realizing skyrmion-based devices is the stabilization of ordered arrays of…
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
Magnetic skyrmions are chiral spin textures with a nontrivial topology that offer a potential for future magnetic memory and storage devices. The controlled formation and adjustment of size and density of magnetic skyrmions in Ta/CoFeB/MgO…
Magnetic skyrmions are topologically protected whirling spin textures that can be stabilized in magnetic materials in which a chiral interaction is present. Their limited size together with their robustness against the external…
Sputter thin film deposition after photolithography often produces unwanted spikes along the side edges. These spikes are a significant issue for the development of magnetic tunnel junction (MTJ)-based memory and molecular spintronics…
The creation and manipulation of magnetic skyrmions in magnetic bilayer heterostructures via spin-orbit torque have been intensively studied in spintronics because of their potential application as information carriers in next-generation…
Non-volatile memory and computing technology rely on efficient read and write of ultra-tiny information carriers that do not wear out. Magnetic skyrmions are emerging as a potential carrier since they are topologically robust nanoscale spin…
The discovery and manipulation of topological Hall effect (THE), an abnormal magnetoelectric response mostly related to the Dzyaloshinskii-Moriya interaction (DMI), are promising for next-generation spintronic devices based on topological…
We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Synthetic antiferromagnetic (SAF) skyrmions have emerged as promising candidates for next-generation high-speed and highly integrated spintronic devices, owing to their exceptional properties such as high driving velocity, nanoscale…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…