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Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…

介观与纳米尺度物理 · 物理学 2024-05-28 Sudipta Majumder , Vaibhav Walve , Rahul Chand , Gokul M. A. , Sooyeon Hwang , G. V. Pavan Kumar , Aparna Deshpande , Atikur Rahman

Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties,…

材料科学 · 物理学 2024-12-10 Elham Easy , Mengqi Fang , Mingxing Li , Eui-Hyeok Yang , Xian Zhang

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…

介观与纳米尺度物理 · 物理学 2016-07-26 Di Wu , Xiao Li , Lan Luan , Xiaoyu Wu , Wei Li , Maruthi N. Yogeesh , Rudresh Ghosh , Zhaodong Chu , Deji Akinwande , Qian Niu , Keji Lai

High electronic transport and reasonable chemical stability of molybdenum disulfide (MoS$_2$) make it very suitable for electrochemical applications. However, its energy storage capacity is still low compared with other nanostructures. In…

应用物理 · 物理学 2022-08-19 Marzieh Rashidi , Foad Ghasemi

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have…

The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…

Transition metal dichalcogenides (TMDs) attract significant attention as potential building blocks in next-generation electronic devices. On the other hand, a comprehensive understanding of how various defects affect local electronic…

材料科学 · 物理学 2026-04-28 Joshua R. Evans , Diego A. Garibay , Aiden N. Kuhls , Mehmet Z. Baykara

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

介观与纳米尺度物理 · 物理学 2015-06-03 Rai Moriya , Takehiro Yamaguchi , Yoshihisa Inoue , Yohta Sata , Sei Morikawa , Satoru Masubuchi , Tomoki Machida

We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…

Electron doping is an excellent tuning knob to explore different phases of matter in two-dimensional (2D) materials. For example, tuning the Fermi level at a van Hove singularity in twisted bilayer graphene can enhance electron-electron…

介观与纳米尺度物理 · 物理学 2024-05-24 Aitor Garcia-Ruiz , Ming-Hao Liu

Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted significant attention because of its outstanding properties, suitable for application in several critical technologies like, solar cells, photocatalysis, lithium-ion batteries,…

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the…

材料科学 · 物理学 2020-07-01 Anne Marie Z. Tan , Christoph Freysoldt , Richard G. Hennig

Layered molecular materials and especially MoS2 are already accepted as promising candidates for nanoelectronics. In contrast to the bulk material, the observed electron mobility in single-layer MoS2 is unexpectedly low. Here we reveal the…

材料科学 · 物理学 2013-05-30 Andrey N. Enyashin , Maya Bar-Sadan , Lothar Houben , Gotthard Seifert

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

Electric conduction mechanisms are studied in the pressed nanoflake powder of the molybdenum-disulfide-oxide (MoSxOy) depending on their content and structure. The MoSxOy nanoflakes were prepared by reaction of (NH4)6Mo7O24 with thiourea in…

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis
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