中文
相关论文

相关论文: Spontaneous charge-ordered state in Bernal-stacked…

200 篇论文

The low-energy bands of twisted bilayer graphene form Dirac cones with approximate electron-hole symmetry at small rotation angles. These crossings are protected by the emergent symmetries of moir\'e patterns, conferring a topological…

介观与纳米尺度物理 · 物理学 2020-11-25 Hector Ochoa

The relativistic-like behavior of electrons in graphene significantly influences the interaction properties of these electrons in a quantizing magnetic field, resulting in more stable fractional quantum Hall effect states as compared to…

介观与纳米尺度物理 · 物理学 2015-06-15 Tapash Chakraborty , Vadim Apalkov

We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag…

介观与纳米尺度物理 · 物理学 2017-09-29 Y. H. Jeong , S. -R. Eric Yang

Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their…

介观与纳米尺度物理 · 物理学 2017-01-27 Matthew Yankowitz , K. Watanabe , T. Taniguchi , Pablo San-Jose , Brian J. LeRoy

Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be…

介观与纳米尺度物理 · 物理学 2022-12-12 Raúl Guerrero-Avilés , Marta Pelc , Fabian Geisenhof , Thomas Weitz , Andrés Ayuela

Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted…

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…

介观与纳米尺度物理 · 物理学 2020-06-17 C. K. Safeer , Josep Ingla-Aynés , Nerea Ontoso , Franz Herling , Wenjing Yan , Luis E. Hueso , Fèlix Casanova

It has been shown that the Kohn--Luttinger superconductivity mechanism interplaying with other types of ordering can be implemented in systems with a hexagonal lattice. A number of unusual properties of such systems in the normal phase have…

Based on the four-band continuum model, we study the ordered-current state (OCS) for electrons in bilayer graphene at the charge neutrality point. The present work resolves the puzzles that (a) the energy gap increases significantly with…

强关联电子 · 物理学 2013-07-10 Xin-Zhong Yan , C. S. Ting

We investigate twisted bilayer graphene near charge neutrality using a generalized Bistritzer-MacDonald continuum model, accounting for corrugation effects. The Fermi velocity vanishes for particular twist angles properly reproducing the…

强关联电子 · 物理学 2022-09-07 Eric Brillaux , David Carpentier , Andrei A. Fedorenko , Lucile Savary

We develop a theory of the correlated magnetically ordered insulating state at the edge of a two-dimensional topological insulator. We demonstrate that the gapped spin-polarized state, induced by the application of the magnetic field $B$,…

强关联电子 · 物理学 2015-03-13 Maxim Kharitonov

The low-temperature phase diagram of multilayer graphene heterostructures is largely defined by the exchange-driven instability that lifts the four-fold isospin degeneracy. Such instability gives rise to the quarter- and half-metal phases,…

介观与纳米尺度物理 · 物理学 2023-03-02 Jiang-Xiazi Lin , Yibang Wang , Naiyuan J. Zhang , Kenji Watanabe , Takashi Taniguchi , Liang Fu , J. I. A. Li

In two-dimensional van der Waals (vdWs) materials, the relative twist angle between adjacent layers not only controls their electronic properties, but also determines their stacking energy. This effect makes it much easier to realize…

介观与纳米尺度物理 · 物理学 2021-04-06 Yi-Wen Liu , Chen-Yue Hao , Lin He

We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each…

介观与纳米尺度物理 · 物理学 2012-11-14 Frank Freitag , Markus Weiss , Romain Maurand , Jelena Trbovic , Christian Schönenberger

Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to…

Heterostructures made of stacked 2D materials with different electronic properties are studied for their potential in creating multifunctional devices. Graphene (G) and hexagonal boron nitride (h-BN) van der Waals (vdW) systems have been…

材料科学 · 物理学 2023-03-16 D. P. de Andrade Deus , J. M. J. Lopes , Roberto H. Miwa

Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field.…

介观与纳米尺度物理 · 物理学 2019-03-27 Manabendra Kuiri , Anindya Das

Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k gate stacks since the potential difference between two layers…

应用物理 · 物理学 2018-09-18 Teerayut Uwanno , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

The ability to engineer the electronic band structure and, more strikingly, to access new exotic phase of matter has been the cornerstone of the advance of science and technology. Twisting van der Waals materials to form moir\'e…

介观与纳米尺度物理 · 物理学 2021-03-10 Sheng-Chin Ho , Ching-Hao Chang , Yu-Chiang Hsieh , Shun-Tsung Lo , Botsz Huang , Thi-Hai-Yen Vu , Carmine Ortix , Tse-Ming Chen

Biased bilayer graphene (BBG) is an important system for studies of excitonic effects in graphene--based systems, with its easily tunable bandgap. This bandgap is governed by an external gate voltage, allowing one to tune the optical…

介观与纳米尺度物理 · 物理学 2024-09-02 M. F. C. Martins Quintela , N. M. R. Peres , T. Garm Pedersen
‹ 上一页 1 8 9 10 下一页 ›