相关论文: Merons, hedgehogs and magnetoelectric switching in…

Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…

We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven…

When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…

Switching in magnetic materials gives rise to rich physical phenomena and lies at the heart of their technological applications. Although domain wall motion in ferro- and antiferromagnets has been studied, in spiral magnets it is still…

The structure of domain walls determines to a large extent the properties of magnetic materials, in particular their hardness and switching behavior, it represents an essential ingredient of spintronics. Common domain walls are of Bloch and…

The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a…

Conventional racetrack memories move information by pushing magnetic domain walls or other spin textures with spin-polarized currents, but the accompanying Joule heating inflates their energy budget and can hamper scaling. Here we present a…

We study the magnetic dynamics of magnetoelectric antiferromagnetic thin films, where an unconventional boundary ferromagnetism coexists with the bulk N\'{e}el phase below the N\'{e}el temperature. The spin exchange between the two order…

The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…

We discover that the way spin-waves exert magnetic torques in multiferroic materials can cause not only domain wall motion, but also magnetization dynamics for homogeneous magnetization textures. Interestingly, the domain wall motion can be…

The antiferromagnetic domain structure of a multiferroic has been investigated in the presence of a ferroelectric domain structure. It has been demonstrated that an inhomogeneous magnetoelectric (flexomagnetoelectric) interaction leads to…

Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain…

In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…

It was recently observed that materials showing most striking multiferroic phenomena are frustrated spin-density-wave magnets. We present a simple phenomenological theory, which describes the orientation of the induced electric polarization…

Electric control of magnetism at room temperature is crucial for developing next-generation, low-power spintronic devices. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the…

Multiferroic hexagonal RMnO3 (R=rare earths) crystals exhibit dense networks of vortex lines at which six domain walls merge. While the domain walls can be readily moved with an applied electric field, the vortex cores were so far…

We use shear-mode Raman imaging to track ferroelectric switching in multilayer 3$R$-MoS$_2$. Within a single flake, mechanically segmented regions respond independently and follow distinct pathways. Partially polarized end states indicate…

Magnetoelectric coupling in multiferroic heterostructures can produce large lateral modulations of magnetic anisotropy enabling the imprinting of ferroelectric domains into ferromagnetic films. Exchange and magnetostatic interactions within…