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Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses…

Solving complex tasks in a modern information-driven society requires novel materials and concepts for energy-efficient hardware. Antiferromagnets offer a promising platform for seeking such approaches due to their exceptional features: low…

Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their…

The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…

介观与纳米尺度物理 · 物理学 2023-06-08 Miklós Csontos , Yannik Horst , Nadia Jimenez Olalla , Ueli Koch , Ivan Shorubalko , András Halbritter , Juerg Leuthold

On the basis of ab initio quantum mechanics (QM) calculation, the obtained electron heat capacity is implemented into energy equation of electron subsystem in two temperature model (TTM). Upon laser irradiation on the copper film, energy…

化学物理 · 物理学 2016-03-01 Pengfei Ji , Yuwen Zhang

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…

We discuss the influence of atomic thermal motion on the efficiency of multimode quantum memory in two configurations: over the free expand of atoms cooled beforehand in a magneto-optical trap, and over complete mixing of atoms in a closed…

量子物理 · 物理学 2015-02-27 K. Tikhonov , T. Golubeva , Yu. Golubev

Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…

The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM.…

材料科学 · 物理学 2021-06-10 K. A. Omari , L. X. Barton , O. Amin , R. P. Campion , A. W. Rushforth , P. Wadley , K. W. Edmonds

Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM…

介观与纳米尺度物理 · 物理学 2021-09-20 Keren Stern , Nicolás Wainstein , Yair Keller , Christopher M. Neumann , Eric Pop , Shahar Kvatinsky , Eilam Yalon

Quantum memories, capable of controllably storing and releasing a photon, are a crucial component for quantum computers and quantum communications. So far, quantum memories have operated with bandwidths that limit data rates to MHz. Here we…

量子物理 · 物理学 2015-05-14 K. F. Reim , J. Nunn , V. O. Lorenz , B. J. Sussman , K. C. Lee , N. K. Langford , D. Jaksch , I. A. Walmsley

The emerging quantum technological apparatuses [1,2], such as the quantum computer [3-5], call for extreme performance in thermal engineering at the nanoscale [6]. Importantly, quantum mechanics sets a fundamental upper limit for the flow…

介观与纳米尺度物理 · 物理学 2015-10-15 Matti Partanen , Kuan Yen Tan , Joonas Govenius , Russell E. Lake , Miika K. Mäkelä , Tuomo Tanttu , Mikko Möttönen

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond…

Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…

Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…

介观与纳米尺度物理 · 物理学 2024-08-21 S. W. Schmid , L. Pósa , T. N. Török , B. Sánta , Z. Pollner , G. Molnár , Y. Horst , J. Volk , J. Leuthold , A. Halbritter , M. Csontos

We study theoretically dynamics of a driven-dissipative qubit-resonator system. Specifically, a transmon qubit is coupled to a transmission-line resonator; this system is considered to be probed via a resonator, by means of either…

介观与纳米尺度物理 · 物理学 2018-07-25 S. N. Shevchenko , D. S. Karpov

This paper presents LongHCPulse: software which enables heat capacity to be collected on a Quantum Design PPMS using a long-pulse method. This method, wherein heat capacity is computed from the time derivative of sample temperature over…

仪器与探测器 · 物理学 2018-08-03 Allen Scheie

CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…

材料科学 · 物理学 2018-10-26 I. A. Zhuravlev , A. Adhikari , K. D. Belashchenko
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