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相关论文: Mass inversion at the Lifshitz transition in monol…

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We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…

介观与纳米尺度物理 · 物理学 2022-01-12 Giulia Piccinini , Vaidotas Mišeikis , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti , Sergio Pezzini

It is well known that the electronic structure of hole-doped cuprate superconductors is tunable through both chemical doping and external pressure, which frequently offer us new insights of understanding on the high-Tc superconducting…

Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it…

材料科学 · 物理学 2023-10-25 Cheng Fan , Kazuyuki Sakamoto , Peter Krüger

The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have…

介观与纳米尺度物理 · 物理学 2015-01-09 I. Kupcic

Kinetics of vacancy defect in graphene drives structural modifications leading to disorder, multi-vacancy complex and edge reconstruction. Within the first-principles calculations, we study the dynamic Jahn-Teller distortion and diffusion…

介观与纳米尺度物理 · 物理学 2018-09-12 Rohit Babar , Mukul Kabir

Insight into why superconductivity in pristine and doped monolayer graphene seems strongly suppressed has been central for the recent years' various creative approaches to realize superconductivity in graphene and graphene-like systems. We…

超导电性 · 物理学 2020-06-12 Even Thingstad , Akashdeep Kamra , Justin W. Wells , Asle Sudbø

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about…

介观与纳米尺度物理 · 物理学 2015-05-13 Timm Lohmann , Klaus v. Klitzing , Jurgen H. Smet

Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to the sizeable transition temperature, robustness against…

介观与纳米尺度物理 · 物理学 2020-01-27 Erik Piatti , Davide Romanin , Renato S. Gonnelli

The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average…

超导电性 · 物理学 2022-05-20 Gopi Nath Daptary , Udit Khanna , Eyal Walach , Arnab Roy , Efrat Shimshoni , Aviad Frydman

The enhanced photocatalytic performance of doped graphene(GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the…

计算物理 · 物理学 2015-10-29 Chao-Ni He , Wei-Qing Huang , Liang Xu , Yin-Cai Yang , Bing-Xin Zhou , Gui-Fang Huang , P. Peng , Wu-Ming Liu

Dispersionless energy bands are a peculiar property gathering increasing attention for the emergence of novel photonic, magnetic and electronic properties. Here we report the first observation of a graphene superstructure n-doped up to the…

介观与纳米尺度物理 · 物理学 2022-08-25 A. Zaarour , V. Malesys , J. Teyssandier , M. Cranney , E. Denys , J. L. Bubendorff , A. Florentin , L. Josien , F. Vonau , D. Aubel , A. Ouerghi , C. Bena , L. Simon

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon…

Recent ab initio calculations and experiments reported insulating-semimetallic phase transitions in multilayer phosphorene under a perpendicular dc field, pressure or doping, as a possible route to realize topological phases. In this work,…

介观与纳米尺度物理 · 物理学 2017-01-20 C. Dutreix , E. A. Stepanov , M. I. Katsnelson

We use the robust nearest-neighbour tight-binding approximation to study on the same footing interband dipole transitions in narrow-bandgap carbon nanotubes and graphene nanoribbons. It is demonstrated that curvature effects in metallic…

介观与纳米尺度物理 · 物理学 2019-04-30 R. R. Hartmann , V. A. Saroka , M. E. Portnoi

A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole)…

材料科学 · 物理学 2011-02-16 Ryo Nouchi , Tatsuya Saito , Katsumi Tanigaki

Tuning the chemical potential of a solid to the vicinity of a van Hove singularity (vHS) is a well-established route to discovering emergent quantum phases. In monolayer graphene, the use of electron-donating metal layers has recently…

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized…

The layered Mott insulator ${\alpha}$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on…

强关联电子 · 物理学 2023-05-08 Xiaohu Zheng , Ke Jia , Junhai Ren , Chongli Yang , Xingjun Wu , Youguo Shi , Katsumi Tanigaki , Rui-Rui Du