相关论文: Large enhancement of spin-orbit torques under a MH…

Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pumping (SP) and…

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin currents absorbed in the FM. We exploit the large spin absorption at the Ru interface to…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…

Current induced spin-orbit torques (SOTs) in Fe/Pt bilayers have been investigated utilizing the spin-orbit torque ferromagnetic resonance (SOT-FMR) measurement. Characterization of thin films with different thicknesses indicates existence…

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…

The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field…

Spin current and spin torque generation through the spin-orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research. The realization of spin-orbit torque (SOT) driven magnetic dynamics and switching…

We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity…

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…

Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…

Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…

The introduction of a strong Rashba spin orbit coupling (SOC) had been predicted to enhance the spin motive force (SMF) [see Phys. Rev. Lett. {\bf 108}, 217202 (2012)]. In this work, we predict further enhancement of the SMF by time…

Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices.…

Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have…

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…

Artificial modulation of a neuronal subset through ion channels activation can initiate firing patterns of an entire neural circuit in vivo. As nanovalves in the cell membrane, voltage-gated ion channels can be artificially controlled by…

Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…