相关论文: Titanium:Sapphire-on-insulator for broadband tunab…
Titanium doped sapphire (Ti:sapphire) is a laser gain material with broad gain bandwidth benefiting from the material stability of sapphire. These favorable characteristics of Ti:sapphire have given rise to femtosecond lasers and optical…
A concept for continuously tunable titanium-sapphire (Ti:Sa) lasers using dispersion prisms is under investigation for the ARIEL (Advanced Rare IsotopE Laboratory) laser ion source at TRIUMF (Canada's particle accelerator center).…
A continuously tunable titanium:sapphire (Ti:Sa) laser self-seeded by an extended grating cavity was demonstrated and characterized. By inserting a partially reflecting mirror inside the cavity of a classic single-cavity grating laser, two…
We report the first experimental demonstration of efficient and high-power operation of a Ti:sapphire laser pumped by a simple, compact, continuous-wave (cw) fiber-laser-based green source. The pump radiation is obtained by direct…
Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…
We developed an injection-locked Ti:sapphire laser at a wavelength of 671 nm where the fluorescence gain of the Ti:sapphire crystal is quite low. We obtained an output of more than 500 mW at a pump power of 10 W. The injection-locked lasing…
Traditional silicon-on-insulator (SOI) platform based on-chip photonic interconnects have limited energy-bandwidth scalability due to the optical non-linearity induced power constraints of the constituent photonic devices. In this paper, we…
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties,…
Light source is indispensable component in on-chip system. Compared with hybrid or heterogeneous integrated laser, monolithically integrated laser is more suitable for high density photonic integrated circuit (PIC) since the capability of…
A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains over 17 dB (12 dB) are obtained for 1 mW (20 mW) of average input power when the…
We demonstrate a single-stage, multipass Ti:sapphire amplifier capable of delivering sub-13 fs, 3.2 mJ pulses at 1 kHz repetition rate. Gaussian filters are used to suppress the gain-narrowing effect, thereby enabling the achievement of an…
Surface acoustic waves (SAWs) enable a wide array of technologies including RF filters, chemical and biological sensors, acousto-optic devices, acoustic control of microfluidic flow in lab-on-a-chip systems, and quantum phononics. While…
We describe Ti:Sapphire pumped optical parametric amplification of carrier-envelope phase stabilized few-cycle ($<10$fs) mid-infrared pulses in type I $\beta$-barium borate. Experimental measurements show a $\times3.5$ amplification factor…
Widely-tunable and narrow-linewidth integrated lasers across all visible wavelengths are necessary to enable on-chip technologies such as quantum photonics, optical trapping, and biophotonics. However, such lasers have not been realized due…
We demonstrate a 1 GHz prismless femtosecond Ti:sapphire ring laser which emits 890 mW for 7.6W of pump power over a continuum extending from 585 to 1200 nm at -20 dB below the maximum. A broadband continuum is obtained without careful…
This study presents a comprehensive optical analysis of titanium-doped sapphire (Ti:Sa) crystals, introducing two innovative measurement techniques to enhance the characterization of this material. The first method enables highly precise…
High-power tunable lasers with good longitudinal and transverse modes are fundamental tools for exploring quantum physics. Here we report a high-power continuous-wave injection-locked titanium:sapphire laser with a low-loss cavity…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…