相关论文: Spin current relaxation time in thermally evaporat…
The spin current relaxation time [tau] in thermally evaporated pentacene films was evaluated with the spin-pump-induced spin transport properties and the charge current transport properties in pentacene films. Under an assumption of a…
We report the spin transport properties in a thin film of a naphthyl diamine derivative: N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine (alpha-NPD). In a palladium(Pd)/alpha-NPD/Ni80Fe20 tri-layer structure sample, a pure…
Spin propagation in systems of one-dimensional interacting fermions at finite temperature is intrinsically diffusive. The spreading rate of a spin packet is controlled by a transport coefficient termed "spin drag" relaxation time $\tau_{\rm…
We report the systematic studies of spin current transport and relaxation mechanism in highly doped organic polymer film. In this study, we have determined spin diffusion length (SDL), spin lifetime, and spin diffusion constant by using…
We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni80Fe20 tri-layer sample, a pure spin-current is generated in the pentacene layer by the…
We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length…
We present a broadband ferromagnetic resonance study of the Gilbert damping enhancement ($\Delta \alpha$) due to spin pumping in NiFe/Pt bilayers. The bilayers, which have negligible interfacial spin memory loss, are studied as a function…
We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker…
Spin relaxation, dephasing and diffusion are at the heart of spin-based information technology. Accurate theoretical approaches to simulate spin lifetimes ($\tau_s$), determining how fast the spin polarization and phase information will be…
The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic…
We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses.…
We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $\lambda_s$ up to 13~\textmu m at room temperature with…
We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $\tau_s$ scales inversely with the mobility $\mu$…
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In…
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to…
In ferromagnetic metals, transverse spin currents are thought to be absorbed via dephasing -- i.e., destructive interference of spins precessing about the strong exchange field. Yet, due to the ultrashort coherence length of $\approx$1 nm…
The negatively charged nitrogen-vacancy centre (NV$^-$) in diamond has been utilized in a wide variety of sensing applications. The centre's long spin coherence and relaxation times ($T_2^*$, $T_2$ and $T_1$) at room temperature are crucial…
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $\mu$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized…
Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…