相关论文: Multipiezo effect in altermagnetic V2SeTeO monolay…
Spin splitting in emerging altermagnets is non-relativistic and momentum-dependent, yet energy-independent, and localized in momentum space, posing challenges for practical applications. Here, we propose an intercalation-driven paradigm for…
A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial…
Magnetically induced ferroelectrics in multiferroics provide an optimal approach to pursuit intrinsically strong magnetoelectricity. However, the complex antiferromagnetism, faint magnetically induced polarization, and low working…
To understand the magnetism of VSe$_2$, whose monolayer form has recently been reported to be a room temperature ferromagnet, Here, the combined method of conventional density functional theory with dynamical mean-field theory has been…
Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane…
We report the magnetic, dielectric and ferroelectric properties of polycrystalline iron vanadate(FeVO4), which has been recently found to exhibit multiferroicity in low temperature with noncollinear magnetic orderings. The influence of…
Altermagnetism refers to a wide class of magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetries, resulting in non-trivial spin splitting and magnetic multipoles. However, the direct observation…
Proximity effects not only complement the conventional methods of designing materials, but also enable realizing properties that are not present in any constituent region of the considered heterostructure. Here we reveal an unexplored…
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in…
We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the…
Nowadays, designing and searching for materials with multiple functional characteristics are the key to achieving high-performance electronic devices. Among many candidates, two-dimensional multiferroic materials have great potential to be…
The newly discovered altermagnets are unconventional collinear compensated magnetic systems, exhibiting even (d, g, or i-wave) spin-polarization order in the band structure, setting them apart from conventional collinear ferromagnets and…
Piezo-magnetoelectric effect, namely simultaneous induction of both the ferromagnetic moment and electric polarization by an application of uniaxial stress, was achieved in the non-ferroelectric and antiferromagnetic ground state of…
Two-dimensional (2D) ferromagnetic semiconductors show great interest due to their potential applications for the nanoscale electronic devices. In this work, the Janus 2$H$-Gd$XY$ ($X$, $Y$=Cl, Br, I, $X$$\neq$$Y$) monolayers with…
We investigate the spin-valley polarization in MoTe$_2$ monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider surface reconstructions for EuO(111). We find that there is…
Controlling magnetism and electronic properties of two-dimensional (2D) materials by purely electrical means is crucial and highly sought for high-efficiency spintronics devices since electric field can be easily applied locally compared…
The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for novel device applications. Here, we predict an…
Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…
BiFeO$_3$ is the most famous multiferroic material, but it has no strong spontaneous magnetization due to its antiferromagnetism. Here we show that giant ferroelectric polarization and strong spontaneous magnetization can be both realized…
The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of spintronic and valleytronic devices. However, it is rare…