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相关论文: Doping the Mott insulating state of the triangular…

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Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…

强关联电子 · 物理学 2012-08-02 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

The pyrochlore lattice involves corner sharing tetrahedra and the resulting geometric frustration is believed to suppress any antiferromagnetic order for Mott insulators on this structure. There are nevertheless short-range correlations…

强关联电子 · 物理学 2016-10-19 Nyayabanta Swain , Rajarshi Tiwari , Pinaki Majumdar

The nature of the metal-insulator Mott transition at zero temperature has been discussed for a number of years. Whether it occurs through a quantum critical point or through a first order transition is expected to profoundly influence the…

强关联电子 · 物理学 2009-01-26 Matthias Balzer , Bumsoo Kyung , David Sénéchal , A. -M. S. Tremblay , Michael Potthoff

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound $\kappa$-H$_3$(Cat-EDT-TTF)$_2$. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice…

强关联电子 · 物理学 2016-12-28 S. Acheche , A. Reymbaut , M. Charlebois , D. Sénéchal , A. -M. S. Tremblay

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon

We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer…

强关联电子 · 物理学 2021-09-15 L. Fratino , S. Bag , A. Camjayi , M. Civelli , M. J. Rozenberg

Layered organic superconductors of the BEDT family are model systems for the interplay of the Mott transition with superconductivity, magnetic order and frustration. Recent experimental studies on a hole-doped version of BEDT compounds…

超导电性 · 物理学 2015-09-24 Charles-David Hébert , Patrick Sémon , A. -M. S. Tremblay

Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…

强关联电子 · 物理学 2008-05-09 Yang Qi , Subir Sachdev

Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…

强关联电子 · 物理学 2007-05-23 L. Craco , M. S. Laad , E. Müller-Hartmann

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered…

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