相关论文: Anomalous Nernst effect in perpendicularly magneti…
Altermagnets are a novel type of magnetic system that has a spin-polarised electric band structure in the absence of a net magnetic moment, leading to exciting prospects in potential device applications. Hexagonal MnTe, a prototypical…
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…
Investigating the off-diagonal components of the conductivity and thermoelectric tensor of materials hosting complex antiferromagnetic structures has become a viable method to reveal the effects of topology and chirality on the electronic…
By developing a bidirectional-pump terahertz (THz) emission spectroscopy, we reveal an anomalous Nernst effect (ANE) induced THz emission in a single ferromagnetic film. Based on the distinctive symmetry of the THz signals, ANE is…
We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and…
The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation…
A single layer ferromagnetic film magnetized in the plane of an ac current flow, exhibits a characteristic Hall voltage with harmonic and second harmonic components, which is attributed to the presence of spin currents with polarization…
We report on an anomalous magnetization observed with temperature for low magnetic fields applied in the plane of a film formed by a thin layer of Fe-Rh deposited on a thin foil of ordered Fe$_3$Pt. The anomalous effect resembles a…
Applying a temperature gradient in a magnetic material generates a voltage that is perpendicular to both the heat flow and the magnetization. This is the anomalous Nernst effect (ANE) which was thought to be proportional to the value of the…
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction.…
The transverse thermoelectric effect enables simpler, more flexible thermoelectric devices by generating electricity perpendicular to heat flow, offering promising solutions for waste heat recovery and solid-state cooling applications.…
Kagome magnets exhibit a range of novel and nontrivial topological properties due to the strong interplay between topology and magnetism, which also extends to their thermoelectric applications. Recent advances in the study of magnetic…
We report here sign reversal and tunability of exchange bias in AuFe cosputtered films of thickness about 63 nm. As deposited film exhibits exchange bias effect at room temperature without external triggering field and its magnitude…
For L1(0) FePt films, the anomalous Hall resistivity is found to be proportional to spontaneous magnetization $M_{\mathrm{S}}$. After the $M_{\mathrm{S}}$ temperature effect is eliminated, $\rho_{\mathrm{xyo}}$ can be fitted by…
Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous…