相关论文: Phosphorescence and donor-acceptor pair recombinat…
The blue-green phosphorescence/thermoluminescence is most commonly observed in diamonds following excitation at or above the indirect band gap and has been explained by a substitutional nitrogen-boron donor-acceptor pair recombination…
In fluorescence spectra of nanodiamonds (NDs) synthesized at high pressure from adamantane and other organic compounds, very narrow (~1 nm) lines of unknown origin are observed in a wide spectroscopic range from ~500 to 800 nm. Here, we…
The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point…
We report hyperpolarization of the electronic spins associated with substitutional nitrogen defects in bulk diamond crystal. Hyperpolarization is achieved by optical pumping of nitrogen vacancy centers followed by rapid cross relaxation at…
Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologies. Here we investigate the stabilization of negatively…
Hydrogen-terminated diamond is known for its p-type surface conductivity, which arises from a near-surface hole accumulation layer induced by adsorbed acceptor species. Here, we demonstrate that these surface acceptors also form optically…
We investigate nonlinear optical absorption in diamond crystals containing high densities of nitrogen vacancy (NV) centers using open-aperture Z-scan measurements with 230 fs laser pulses at 1032 nm, within the transparency window of…
Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion…
Photochromism in single nitrogen-vacancy optical centers in diamond is demonstrated. Time-resolved optical spectroscopy shows that intense irradiation at 514 nm switches the nitrogen-vacancy defects to the negative form. This defect state…
Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds…
Thanks to its low or negative surface electron affinity and chemical inertness, diamond is attracting broad attention as a source material of solvated electrons produced by optical excitation of the solid-liquid interface. Unfortunately,…
The photophysics and charge state dynamics of the nitrogen vacancy (NV) center in diamond has been extensively investigated but is still not fully understood. In contrast to previous work, we find that NV$^{0}$ converts to NV$^{-}$ under…
Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond…
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A…
Excitations of impurity complexes in semiconductors can not only provide a route to fill the terahertz gap in optical technologies, but can also connect local quantum bits to scale up solid-state quantum-computing devices. However, taking…
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV)…
The use of diamond color centers such as the nitrogen-vacancy (NV) center is increasingly enabling quantum sensing and computing applications. Novel concepts like cavity coupling and readout, laser threshold magnetometry and multi-pass…
Symmetry considerations are used in presenting a model of the electronic structure and the associated dynamics of the nitrogen-vacancy center in diamond. The model accounts for the occurrence of optically induced spin polarization, for the…
Qubit technologies using nitrogen-vacancy color centers in diamonds require precise knowledge of the centers, including the number of emitters within a diffraction-limited spot and their orientations. However, the number of emitters is…
Irradiation of natural pink and brown diamond by middle-ultraviolet light (photon energy > 4.1 eV) is seen to induce anomalous fluorescence phenomena at N3 defect centres (structure N3-V). When diamonds primed in this fashion are…