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In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…

介观与纳米尺度物理 · 物理学 2017-03-07 Xing-Tao An , Jiang Xiao , M. W. -Y. Tu , Hongyi Yu , Vladimir I. Fal'ko , Wang Yao

We propose a mechanism where the valley splitting is caused by an in-plane electric polarization and the coupling between the two makes it possible for an electric field to control the valley degree of freedom. We demonstrate this by…

材料科学 · 物理学 2025-05-26 Srishti Bhardwaj , T. Maitra

Sliding ferroelectricity in bilayer van der Waals materials exhibits ultrafast switching speed and fatigue resistance during the polarization switching, offering an avenue for the design of memories and neuromorphic devices. The unique…

材料科学 · 物理学 2025-02-21 Yubai Shi , Yuxiang Gao , Ri He , Hua Wang , Binwen Zhang , Zhicheng Zhong

The coherent manipulation of spin and pseudospin underlies existing and emerging quantum technologies, including NMR, quantum communication, and quantum computation. Valley polarization, associated with the occupancy of degenerate, but…

介观与纳米尺度物理 · 物理学 2017-02-01 Ziliang Ye , Dezheng Sun , Tony F. Heinz

The physical properties of crystals are governed by their symmetry according to Neumann's principle. However, we present a case that contradicts this principle wherein the polarization is not invariant under its symmetry. We term this…

材料科学 · 物理学 2023-04-25 Junyi Ji , Guoliang Yu , Changsong Xu , H. J. Xiang

Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer…

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase (Pca2_1) responsible for…

材料科学 · 物理学 2026-03-27 Jian Huang , Gwan Yeong Jung , Pravan Omprakash , Guodong Ren , Xin Li , Du Li , Xiaoshan Xu , Li Yang , Rohan Mishra

Polar topologies, such as vortex and skyrmion, have attracted significant interest due to their unique physical properties and promising applications in high-density memory devices. Currently, most polar vortices are observed in…

应用物理 · 物理学 2024-04-15 Haozhi Sha , Yixuan Zhang , Yunpeng Ma , Wei Li , Wenfeng Yang , Jizhe Cui , Qian Li , Houbing Huang , Rong Yu

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…

We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked…

介观与纳米尺度物理 · 物理学 2020-10-30 Christophe De Beule , Peter G. Silvestrov , Ming-Hao Liu , Patrik Recher

We analyze the transition into the most favorable ordered state for a system of 2D fermions with spin and valley degrees of freedom. We show that for a range of rotationally invariant dispersions, the ordering transition is highly…

强关联电子 · 物理学 2024-06-10 Zachary M. Raines , Leonid I. Glazman , Andrey V. Chubukov

We demonstrate that sliding motion between two layers of the newly discovered ferroelectric and topologically trivial bismuth (Bi) monolayer [Nature 617, 67 (2023)] can induce a sequence of topological phase transitions, alternating between…

计算物理 · 物理学 2023-12-06 Zhuang Qian , Zhihao Gong , Jian Li , Hua Wang , Shi Liu

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…

材料科学 · 物理学 2022-01-05 San-Dong Guo , Jing-Xin Zhu , Wen-Qi Mu , Bang-Gui Liu

Nonmagnetic topological insulators (TIs) are known for their robust metallic surface/edge states that are protected by time-reversal symmetry, making them promising candidates for next-generation spintronic and nanoelectronic devices.…

介观与纳米尺度物理 · 物理学 2025-11-14 Arjyama Bordoloi , Daniel Kaplan , Sobhit Singh

Van der Waals "sliding" ferroelectric bilayers, whose electric polarization is locked to the interlayer alignment, show promise for future non-volatile memory and other nanoelectronic devices. These applications require a fuller…

统计力学 · 物理学 2025-09-19 Benjamin Remez , Moshe Goldstein

2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…

量子物理 · 物理学 2023-09-20 Rui E. F. Silva , Misha Ivanov , Álvaro Jiménez-Galán

We employ ab-initio electronic structure calculations to investigate the charge-density waves and periodic lattice distortions in bilayer 2H-NbSe$_2$. We demonstrate that the vertical stacking can give rise to a variety of patterns that may…

We present the results for the evolution of the Fermi surfaces under variation of number density and displacement field for spin and valley-polarized states in Bernal bilayer graphene (BBG) using a realistic form of the electronic…

强关联电子 · 物理学 2025-04-04 R. David Mayrhofer , Andrey V. Chubukov

Here we propose BC$_3$, a graphene derivative that has been synthesized, as a platform to realize exotic quantum phases by introducing a moir\'e pattern with mismatched stacking. In twisted bilayer BC$_3$, it is shown that a crossover from…

介观与纳米尺度物理 · 物理学 2023-03-01 Toshikaze Kariyado

Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin…