相关论文: A planar defect spin sensor in a two-dimensional m…
Optically addressable spins in two-dimensional hexagonal boron nitride (hBN) attract widespread attention for their potential advantage in on-chip quantum devices, such as quantum sensors and quantum network. A variety of spin defects have…
Optically addressable solid-state spins are an important platform for practical quantum technologies. Van der Waals material hexagonal boron nitride (hBN) is a promising host as it contains a wide variety of optical emitters, but thus far…
The defect-mediated hexagonal boron nitride (hBN) supercell display the visible optical spectra and electronic characteristics. The defects in the hBN supercell include the atomic vacancy, antisite, antisite vacancy, and substitution of a…
Hexagonal boron nitride (hBN) spin defects off er transformative potential for quantum sensing through atomic-scale proximity to target samples, yet their performance is fundamentally limited by rapid coherence loss. While magnetic noise…
Optically active quantum defects in solids, such as the nitrogen vacancy (NV) center in diamond, are a leading modality for micron-scale and nanoscale (ultralow-mass) nuclear magnetic resonance (NMR) spectroscopy and imaging under ambient…
Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of…
Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate high-spatial-resolution magnetic field imaging with a boron vacancy (V$_\text{B}^-$) defects array in hexagonal boron nitride…
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close…
Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is important to characterize the spin coherence times T2* and T2. In…
Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency…
Charged boron vacancies (V$_\text{B}^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for quantum nanoscale sensing and imaging. While these primarily involve electron spins, nuclear spins provide an additional…
Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the…
Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other…
Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split…
Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new…
Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin…
Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like…
Ensembles of negatively charged boron vacancy (V$_{\text{B}}^-$) centers in hexagonal boron nitride (hBN) have emerged as a two-dimensional spin qubit system interfaced with optics to advance nanoscale quantum sensing. However, a…
The negatively charged boron vacancy center in 2D hexagonal boron nitride has emerged as a promising quantum sensor. However, its sensitivity is constrained due to ubiquitous nuclear spins in the environment. The nuclear spins, hyperfine…
Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional (2D) hexagonal boron nitride (hBN) is an attractive solid state platform with a…