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We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable…

材料科学 · 物理学 2009-08-11 Shengwei Shi , Junbiao Peng , Jian Lin , Dongge Ma

The large magnetocaloric effect (MCE) observed in Ni-Mn based shape-memory Heusler alloys put them forward to use in magnetic refrigeration technology. It is associated with a first-order magnetostructural (martensitic) phase transition. We…

Memristor is the fourth fundamental passive circuit element with potential applications in development of analog memories, artificial brains (with the capacity of hardware training) and neuro-science. In most of these applications the…

其他计算机科学 · 计算机科学 2013-02-06 Farshad Merrikh-Bayat , Nafiseh Mirebrahimi , Farhad Bayat

We develop a theory of pulse conduction in percolation type of materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse…

介观与纳米尺度物理 · 物理学 2020-03-23 V. G. Karpov , G. Serpen , Maria Patmiou , Diana Shvydka

With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory…

超导电性 · 物理学 2022-08-31 Remko Fermin , Naor Scheinowitz , Jan Aarts , Kaveh Lahabi

The dynamics of magnetization and current-voltage characteristics of the superconductor-ferromagnet-superconductor $\varphi_0$ Josephson junction in the presence of external electromagnetic radiation have been studied. Effects of radiation…

超导电性 · 物理学 2024-07-22 M. Nashaat , E. Kovalenko , Yu. M. Shukrinov

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$…

介观与纳米尺度物理 · 物理学 2021-10-19 Jhen-Yong Hong , Chun-Yen Chen , Dah-Chin Ling , Isidoro Martínez , César González-Ruano , Farkhad G. Aliev

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

We present a simple nanodevice that can operate in two modes: i) three-state memory and ii) reading device. The nanodevice is fabricated with an array of ordered triangular-shaped nanomagnets embedded in a superconducting thin film. The…

超导电性 · 物理学 2016-08-05 J. del Valle , A. Gomez , E. M. Gonzalez , M. R. Osorio , D. Granados , J. L. Vicent

Recurrent transducer models have emerged as a promising solution for speech recognition on the current and next generation smart devices. The transducer models provide competitive accuracy within a reasonable memory footprint alleviating…

The Marcus-Hush-Chidsey (MHC) model is well known in electro-analytical chemistry as a successful microscopic theory of outer-sphere electron transfer at metal electrodes, but it is unfamiliar and rarely used in electrochemical engineering.…

化学物理 · 物理学 2014-07-22 Yi Zeng , Raymond Smith , Peng Bai , Martin Z. Bazant

Several devices exhibiting memory effects have shown up in nonlinear circuit theory in recent years. Among others, these circuit elements include Chua's memristors, as well as memcapacitors and meminductors. These and other related devices…

动力系统 · 数学 2013-07-09 Ricardo Riaza

Fractional-order dynamical systems are used to describe processes that exhibit temporal long-term memory and power-law dependence of trajectories. There has been evidence that complex neurophysiological signals like electroencephalogram…

最优化与控制 · 数学 2019-10-02 Orlando Romero , Sarthak Chatterjee , Sérgio Pequito

Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

强关联电子 · 物理学 2015-01-15 H. Oike , F. Kagawa , N. Ogawa , A. Ueda , H. Mori , M. Kawasaki , Y. Tokura

This paper presents analytic study and design considerations of flat wire inductors with distributed gaps for high-power and compact DC-DC Converters. The focus is eddy current loss components within the conductors due to fringing and…

系统与控制 · 电气工程与系统科学 2024-12-02 Sajjad Mohammadi , James L. Kirtley , Alireza Namadmalan

Memristors have emerged as ideal components for modeling synaptic connections in neural networks due to their ability to emulate synaptic plasticity and memory effects. Discrete models of memristor-coupled neurons are crucial for…

神经元与认知 · 定量生物学 2025-10-07 Leila Eftekhari , Moein Khalighi , Saeid Abbasbandy

Current-carrying conductors inevitably experience resistive heating due to the material's finite electrical conductivity. The resulting temperature distribution within the wire has essential implications for structural integrity,…

Haptic rendering of viscoelastic materials that exhibit creep and stress relaxation is crucial for many applications, such as medical training with realistic biological tissue models. Fractional-order viscoelastic models provide an…

机器人学 · 计算机科学 2026-05-19 Gorkem Gemalmaz , Harun Tolasa , Volkan Patoglu

The fluctuation induced diamagnetism of underdoped high temperature superconductors is studied in the framework of the Lawrence-Doniach model. By taking into account the fluctuations of the phase of the order parameter only, the latter…

超导电性 · 物理学 2009-11-07 Alain Sewer , Hans Beck

The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with a hysteresis in…