中文
相关论文

相关论文: Anisotropic Lattice Expansion of Monolayer WSe2 Re…

200 篇论文

Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered…

Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap…

We study monolayer WSe2 using ultrafast electron diffraction. We introduce an approach to quantitatively extract atomic-site-specific information, providing an element-specific view of incoherent atomic vibrations following femtosecond…

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

介观与纳米尺度物理 · 物理学 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

Atomic rearrangements within crystals lie at the foundation of electron-phonon-coupled phenomena such as metal-insulator transition and superconductivity. Advanced laser-pump-probe studies have recently focused on various…

We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show…

介观与纳米尺度物理 · 物理学 2015-03-06 Ashish Arora , Maciej Koperski , Karol Nogajewski , Jacques Marcus , Clement Faugeras , Marek Potemski

Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challenging material from the lattice dynamics point of view. Indeed, for a long time the main two phonon modes (A1g and E12g) have been wrongly…

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such…

材料科学 · 物理学 2015-06-23 A. T. Hanbicki , M. Currie , G. Kioseoglou , A. L. Friedman , B. T. Jonker

We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain…

We report the lattice dynamics of transition metal thin films by using the ultrafast electron diffraction. We observe a suppression of the diffraction intensity in a few picosecond after the photoexcitation, which is directly interpreted as…

材料科学 · 物理学 2016-01-19 A. Nakamura , T. Shimojima , M. Nakano , Y. Iwasa , K. Ishizaka

Many monolayer transition metal dichalcogenides, including MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, are direct bandgap two-dimensional (2D) semiconductors with sharp optical resonances at excitonic bound state frequencies. Recent experiments…

介观与纳米尺度物理 · 物理学 2025-10-27 Tobias M. R. Wolf , Tian Xie , Chenhao Jin , Allan H. MacDonald

It has been technically challenging to concurrently probe the electrons and the lattices in materials during non-equilibrium processes, allowing their correlations to be determined. Here, in a single set of ultrafast electron diffraction…

We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of one-ML-thick,…

材料科学 · 物理学 2020-01-29 E. Blundo , M. Felici , T. Yildirim , G. Pettinari , D. Tedeschi , A. Miriametro , B. Liu , W. Ma , Y. Lu , A. Polimeni

Monolayers of transition metal dichalcogenides (TMDs) have a remarkable excitonic landscape with deeply bound bright and dark exciton states. Their properties are strongly affected by lattice distortions that can be created in a controlled…

There are conflicting predictions and reports on the character of the exciton Mott transition (EMT) in monolayer transition metal dichalcogenides. It could be either a discontinuous or a continuous transition from the excitonic to the…

材料科学 · 物理学 2026-01-27 Subhadra Mohapatra , Samuel Palato , Nicholas Olsen , Julia Stähler , Lukas Gierster

The transition between different states in manganites can be driven by various external stimuli. Controlling these transitions with light opens the possibility to investigate the microscopic path through which they evolve. We performed…

强关联电子 · 物理学 2014-01-17 L. Piazza , C. Ma , H. X. Yang , A. Mann , Y. Zhu , J. Q. Li , F. Carbone

We explore the direct to indirect band gap transitions in MX$_2$ (M= Mo/W, X= S/Se) transition metal dichalcogenides heterobilayers for different system compositions, strains, and twist angles based on first principles density functional…

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin…

Atomically thin two-dimensional crystals have revolutionized materials science. In particular, monolayer transition metal dichalcogenides promise novel optoelectronic applications, due to their direct energy gaps in the optical range. Their…

We use a coherent Bragg diffraction method to impart an external momentum to ultracold bosonic atoms trapped in a one-dimensional optical lattice. This method is based on the application of a single light pulse, with conditions where…

量子气体 · 物理学 2015-05-27 Xinxing Liu , Xiaoji Zhou , Wei Zhang , Thibault Vogt , Bo Lu , Xuguang Yue , Xuzong Chen
‹ 上一页 1 2 3 10 下一页 ›